The origin of preferred orientation during carbon film growth

Carbon films were prepared using a filtered cathodic vacuum arc deposition system operated with a substrate bias varying linearly with time during growth. Ion energies were in the range between 95 and 620 eV. Alternating dark, high density (sp(3) rich) bands and light, low density (sp(2) rich) bands...

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Veröffentlicht in:	Journal of physics. Condensed matter 2009-06, Vol.21 (22), p.225003-225003 (9)
Hauptverfasser:	Taylor, M B, Lau, D W M, Partridge, J G, McCulloch, D G, Marks, N A, Teo, E H T, McKenzie, D R
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
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