Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film
This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative repor...
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| Veröffentlicht in: | IEEE electron device letters 2008-08, Vol.29 (8), p.852-855 |
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| container_title | IEEE electron device letters |
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| creator | KIM, Tae-Wook OH, Seung-Hwan CHOI, Hyejung WANG, Gunuk HWANG, Hyunsang KIM, Dong-Yu LEE, Takhee |
| description | This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity. |
| doi_str_mv | 10.1109/LED.2008.2000967 |
| format | Article |
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The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2000967</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceptability ; Applied sciences ; Compound structure devices ; Data storage ; Derivatives ; Design. Technologies. Operation analysis. Testing ; Devices ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Magnetic and optical mass memories ; Materials science and technology ; Memory devices ; Metal oxide semiconductors ; Nanoparticles ; Nonvolatile memory ; Organic electronics ; Organic light emitting diodes ; Organic materials ; Organic memory device ; polyfluorene derivative ; Power engineering and energy ; reversible switching ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor films ; Storage and reproduction of information ; Substrates ; Switching ; Thermal stability ; Variability</subject><ispartof>IEEE electron device letters, 2008-08, Vol.29 (8), p.852-855</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-3ce222a6aac1225f28b6a7780e6b0510c8e1c6589302a3b78c1353fcd975fe263</citedby><cites>FETCH-LOGICAL-c383t-3ce222a6aac1225f28b6a7780e6b0510c8e1c6589302a3b78c1353fcd975fe263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4571130$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4571130$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20531807$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KIM, Tae-Wook</creatorcontrib><creatorcontrib>OH, Seung-Hwan</creatorcontrib><creatorcontrib>CHOI, Hyejung</creatorcontrib><creatorcontrib>WANG, Gunuk</creatorcontrib><creatorcontrib>HWANG, Hyunsang</creatorcontrib><creatorcontrib>KIM, Dong-Yu</creatorcontrib><creatorcontrib>LEE, Takhee</creatorcontrib><title>Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity.</description><subject>Acceptability</subject><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Data storage</subject><subject>Derivatives</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Magnetic and optical mass memories</subject><subject>Materials science and technology</subject><subject>Memory devices</subject><subject>Metal oxide semiconductors</subject><subject>Nanoparticles</subject><subject>Nonvolatile memory</subject><subject>Organic electronics</subject><subject>Organic light emitting diodes</subject><subject>Organic materials</subject><subject>Organic memory device</subject><subject>polyfluorene derivative</subject><subject>Power engineering and energy</subject><subject>reversible switching</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>Storage and reproduction of information</subject><subject>Substrates</subject><subject>Switching</subject><subject>Thermal stability</subject><subject>Variability</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1rGzEQBmARGqib5F7oZSm0OW06-tYeS5wvcOKSxLeAkNXZoCCvUsk2-N9HxiaHHnKRQPPMMOIl5CuFM0qh-zW5GJ8xALM9oFP6gIyolKYFqfgnMgItaMspqM_kSykvAFQILUbk6R5jcPOIzTQ_uyH45i4N6xTdMtS3W1ykvGnGuA4em1kJw3Pjmj8pbvq4ShkHbMeYw7rqNTYPtRyxnbgN5uYyxMUxOexdLHiyv4_I7PLi8fy6nUyvbs5_T1rPDV-23CNjzCnnPGVM9szMldPaAKo5SAreIPVKmo4Dc3yujadc8t7_7bTskSl-RE53c19z-rfCsrSLUDzG6AZMq2KNliC6TkOVPz-UXEjOJKUVfv8PvqRVHuovbFeX1EIqURHskM-plIy9fc1h4fLGUrDbVGxNxW5TsftUasuP_VxXvIt9doMP5b2PgeTUwNZ927mAiO9lIXXdDfgbB-WTxw</recordid><startdate>20080801</startdate><enddate>20080801</enddate><creator>KIM, Tae-Wook</creator><creator>OH, Seung-Hwan</creator><creator>CHOI, Hyejung</creator><creator>WANG, Gunuk</creator><creator>HWANG, Hyunsang</creator><creator>KIM, Dong-Yu</creator><creator>LEE, Takhee</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Magnetic and optical mass memories</topic><topic>Materials science and technology</topic><topic>Memory devices</topic><topic>Metal oxide semiconductors</topic><topic>Nanoparticles</topic><topic>Nonvolatile memory</topic><topic>Organic electronics</topic><topic>Organic light emitting diodes</topic><topic>Organic materials</topic><topic>Organic memory device</topic><topic>polyfluorene derivative</topic><topic>Power engineering and energy</topic><topic>reversible switching</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor films</topic><topic>Storage and reproduction of information</topic><topic>Substrates</topic><topic>Switching</topic><topic>Thermal stability</topic><topic>Variability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KIM, Tae-Wook</creatorcontrib><creatorcontrib>OH, Seung-Hwan</creatorcontrib><creatorcontrib>CHOI, Hyejung</creatorcontrib><creatorcontrib>WANG, Gunuk</creatorcontrib><creatorcontrib>HWANG, Hyunsang</creatorcontrib><creatorcontrib>KIM, Dong-Yu</creatorcontrib><creatorcontrib>LEE, Takhee</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, Tae-Wook</au><au>OH, Seung-Hwan</au><au>CHOI, Hyejung</au><au>WANG, Gunuk</au><au>HWANG, Hyunsang</au><au>KIM, Dong-Yu</au><au>LEE, Takhee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-08-01</date><risdate>2008</risdate><volume>29</volume><issue>8</issue><spage>852</spage><epage>855</epage><pages>852-855</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.2000967</doi><tpages>4</tpages></addata></record> |
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| subjects | Acceptability Applied sciences Compound structure devices Data storage Derivatives Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Materials science and technology Memory devices Metal oxide semiconductors Nanoparticles Nonvolatile memory Organic electronics Organic light emitting diodes Organic materials Organic memory device polyfluorene derivative Power engineering and energy reversible switching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Storage and reproduction of information Substrates Switching Thermal stability Variability |
| title | Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film |
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