Optical, structural investigations and band-gap bowing parameter of GaInN alloys

We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of Ga x In 1− x N alloys grown by metal-organic vapour-phase epitaxy through the whole composition range. The evolution of the photoluminescence lineshape of GaInN alloys in the indium-rich region i...

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Veröffentlicht in:	Journal of Crystal Growth 2009-05, Vol.311 (10), p.2795-2797
Hauptverfasser:	Moret, M., Gil, B., Ruffenach, S., Briot, O., Giesen, Ch, Heuken, M., Rushworth, S., Leese, T., Succi, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Band Gap A1. Bowing Parameter A3. MOCVD B1. InGaN Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Vapor phase epitaxy growth from vapor phase
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