Investigation of Proton and X-Ray Irradiation Effects on Nanocrystal and Floating Gate Memory Cell Arrays

We compared the radiation tolerance of nanocrystal and floating gate memories, fabricated with the same technology. We investigated the effects of 5-MeV proton and 10-keV X-ray irradiations, focusing on the charge loss, the permanent degradation of the electrical characteristics, and the data retent...

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Veröffentlicht in:	IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3000-3008
Hauptverfasser:	Wrachien, N., Cester, A., Portoghese, R., Gerardi, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge CMOS memory integrated circuits Degradation Electric charge Electric variables Ferroelectric materials flash memories Focusing Gates Irradiation Magnetic materials Nanocrystals Nonvolatile memory Phase change memory Protons radiation effects Robustness Scalability semiconductor devices reliability semiconductor memories Threshold voltage X-rays
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