A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport

We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n...

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Veröffentlicht in:	IEEE electron device letters 2009-02, Vol.30 (2), p.165-167
Hauptverfasser:	Tahui Wang, Chun-Jung Tang, Li, C.-W., Chih Hsiung Lee, Ou, T.-F., Yao-Wen Chang, Wen-Jer Tsai, Tao-Cheng Lu, Chen, K.-C., Chih-Yuan Lu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Channels Charge transport Compound structure devices Computer simulation Costs Councils Design. Technologies. Operation analysis. Testing Electronics Electrons Energy measurement Exact sciences and technology Fabrication Flash memory Integrated circuits Integrated circuits by function (including memories and processors) Low V_{\rm ds} Low voltage Magnetic and optical mass memories Monte Carlo methods new hot-electron programming Programming Residual energy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SONOS SONOS devices Storage and reproduction of information Tunneling Voltage
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