Fabrication of 20 nm patterns for automatic measurement of electron beam size using BEAMETR technique
BEAMETR technique is developed for robust operator independent measurement of electron beam sizes in two coordinates. This method involves software and a specially designed pattern-sample. In this paper, we report the fabrication of this sample and the demonstration of beam size and shape measuremen...
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Veröffentlicht in: | Microelectronic engineering 2009-04, Vol.86 (4), p.524-528 |
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creator | Babin, S. Cabrini, S. Dhuey, S. Harteneck, B. Machin, M. Martynov, A. Peroz, C. |
description | BEAMETR technique is developed for robust operator independent measurement of electron beam sizes in two coordinates. This method involves software and a specially designed pattern-sample. In this paper, we report the fabrication of this sample and the demonstration of beam size and shape measurements for different Scanning Electron Microscopes and operating conditions (voltage, aperture, astigmatism) with a good consistency. Electron Beam Lithography system (100
keV) was used for patterning; proximity correction was applied to improve pattern quality. In this chip version, the minimum feature linewidth was 20
nm after lift-off. |
doi_str_mv | 10.1016/j.mee.2008.11.074 |
format | Article |
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keV) was used for patterning; proximity correction was applied to improve pattern quality. In this chip version, the minimum feature linewidth was 20
nm after lift-off.</description><subject>Applied sciences</subject><subject>Electron Beam Lithography</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Metrology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanofabrication</subject><subject>Physics</subject><subject>Scanning probe microscopes, components and techniques</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kMFu1DAQhi0EEkvhAbj5ArcETxyvHXEq1RaQiipV7dlyvDPgVeIstlOpPD1ebcWR08jS9_8z_hh7D6IFAdtPh3ZGbDshTAvQCt2_YBswWjZKbc1LtqmMbgYJ-jV7k_NB1HcvzIbhtRtT8K6EJfKFeCd4nPnRlYIpZk5L4m4ty1wBz2d0eU04YywnFif0JdXciG7mOfxBvuYQf_Ivu8sfu_s7XtD_iuH3im_ZK3JTxnfP84I9XO_ur741N7dfv19d3jReKlMa6HoiTUQKVS968qg1jhIG39XLgWgPkgZFoKQxQ9drM9KgDelejtvOaXnBPp57j2mpa3Oxc8gep8lFXNZsZa9ADWAqCGfQpyXnhGSPKcwuPVkQ9iTUHmwVak9CLYCtQmvmw3O5y95NlFz0If8LdqCHQZlT9-czh_WnjwGTzT5g9LgPqQqz-yX8Z8tfMQOK8w</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Babin, S.</creator><creator>Cabrini, S.</creator><creator>Dhuey, S.</creator><creator>Harteneck, B.</creator><creator>Machin, M.</creator><creator>Martynov, A.</creator><creator>Peroz, C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090401</creationdate><title>Fabrication of 20 nm patterns for automatic measurement of electron beam size using BEAMETR technique</title><author>Babin, S. ; Cabrini, S. ; Dhuey, S. ; Harteneck, B. ; Machin, M. ; Martynov, A. ; Peroz, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-124ff7fff5e5404fce77eb319c23171ffd13f95f1538892478bf978f743b62a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Electron Beam Lithography</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Metrology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanofabrication</topic><topic>Physics</topic><topic>Scanning probe microscopes, components and techniques</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Babin, S.</creatorcontrib><creatorcontrib>Cabrini, S.</creatorcontrib><creatorcontrib>Dhuey, S.</creatorcontrib><creatorcontrib>Harteneck, B.</creatorcontrib><creatorcontrib>Machin, M.</creatorcontrib><creatorcontrib>Martynov, A.</creatorcontrib><creatorcontrib>Peroz, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Babin, S.</au><au>Cabrini, S.</au><au>Dhuey, S.</au><au>Harteneck, B.</au><au>Machin, M.</au><au>Martynov, A.</au><au>Peroz, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of 20 nm patterns for automatic measurement of electron beam size using BEAMETR technique</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>86</volume><issue>4</issue><spage>524</spage><epage>528</epage><pages>524-528</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>BEAMETR technique is developed for robust operator independent measurement of electron beam sizes in two coordinates. This method involves software and a specially designed pattern-sample. In this paper, we report the fabrication of this sample and the demonstration of beam size and shape measurements for different Scanning Electron Microscopes and operating conditions (voltage, aperture, astigmatism) with a good consistency. Electron Beam Lithography system (100
keV) was used for patterning; proximity correction was applied to improve pattern quality. In this chip version, the minimum feature linewidth was 20
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source | ScienceDirect Journals (5 years ago - present) |
subjects | Applied sciences Electron Beam Lithography Electronics Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Metrology Microelectronic fabrication (materials and surfaces technology) Nanofabrication Physics Scanning probe microscopes, components and techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Fabrication of 20 nm patterns for automatic measurement of electron beam size using BEAMETR technique |
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