Low energy ion beam machining of ULE ® substrates: Evaluation of surface roughness
In order to apply ion beam figuring (IBF) to final shape correction of the substrates of projection optics for EUVL, ion beam machining characteristics such as high-spatial frequency roughness (HSFR) and mid-spatial frequency surface roughness (MSFR) of ULE ® substrate were investigated. Our previou...
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| Veröffentlicht in: | Microelectronic engineering 2009-04, Vol.86 (4), p.497-499 |
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| creator | Inaba, Takuro Kurashima, Yuichi Pahlovy, Shahjada A. Miyamoto, Iwao Ando, Manabu Numata, Atsushi |
| description | In order to apply ion beam figuring (IBF) to final shape correction of the substrates of projection optics for EUVL, ion beam machining characteristics such as high-spatial frequency roughness (HSFR) and mid-spatial frequency surface roughness (MSFR) of ULE
® substrate were investigated. Our previous research confirmed that the surface roughness of the ULE
® machined by Ar
+ ion beam with energy of 3–10
keV decreases with decreasing the ion beam energy. Therefore, we have conducted our research on ion beam machining of ULE
® substrate by Ar
+ ion beam with energy from 0.2 to 2
keV. The HSFR and MSFR of the mechanically pre-finished ULE
® substrate were 0.06 and 0.07
nm
rms, respectively; whereas, the HSFR and MSFR of the substrate irradiated by Ar
+ ion beam at energy of 0.3
keV were less than 0.10 and 0.08
nm
rms, respectively. The HSFR is the best result among our previous and other current research. |
| doi_str_mv | 10.1016/j.mee.2008.11.044 |
| format | Article |
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® substrate were investigated. Our previous research confirmed that the surface roughness of the ULE
® machined by Ar
+ ion beam with energy of 3–10
keV decreases with decreasing the ion beam energy. Therefore, we have conducted our research on ion beam machining of ULE
® substrate by Ar
+ ion beam with energy from 0.2 to 2
keV. The HSFR and MSFR of the mechanically pre-finished ULE
® substrate were 0.06 and 0.07
nm
rms, respectively; whereas, the HSFR and MSFR of the substrate irradiated by Ar
+ ion beam at energy of 0.3
keV were less than 0.10 and 0.08
nm
rms, respectively. The HSFR is the best result among our previous and other current research.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2008.11.044</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electronics ; EUVL ; Exact sciences and technology ; HSFR ; Ion beam ; Machining ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; ULE</subject><ispartof>Microelectronic engineering, 2009-04, Vol.86 (4), p.497-499</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-b424da17bc74f464c0aaf106625f589ce8ff6cbb9fea93247938621ba58a8ba03</citedby><cites>FETCH-LOGICAL-c424t-b424da17bc74f464c0aaf106625f589ce8ff6cbb9fea93247938621ba58a8ba03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2008.11.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23934,23935,25144,27928,27929,45999</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21799581$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Inaba, Takuro</creatorcontrib><creatorcontrib>Kurashima, Yuichi</creatorcontrib><creatorcontrib>Pahlovy, Shahjada A.</creatorcontrib><creatorcontrib>Miyamoto, Iwao</creatorcontrib><creatorcontrib>Ando, Manabu</creatorcontrib><creatorcontrib>Numata, Atsushi</creatorcontrib><title>Low energy ion beam machining of ULE ® substrates: Evaluation of surface roughness</title><title>Microelectronic engineering</title><description>In order to apply ion beam figuring (IBF) to final shape correction of the substrates of projection optics for EUVL, ion beam machining characteristics such as high-spatial frequency roughness (HSFR) and mid-spatial frequency surface roughness (MSFR) of ULE
® substrate were investigated. Our previous research confirmed that the surface roughness of the ULE
® machined by Ar
+ ion beam with energy of 3–10
keV decreases with decreasing the ion beam energy. Therefore, we have conducted our research on ion beam machining of ULE
® substrate by Ar
+ ion beam with energy from 0.2 to 2
keV. The HSFR and MSFR of the mechanically pre-finished ULE
® substrate were 0.06 and 0.07
nm
rms, respectively; whereas, the HSFR and MSFR of the substrate irradiated by Ar
+ ion beam at energy of 0.3
keV were less than 0.10 and 0.08
nm
rms, respectively. The HSFR is the best result among our previous and other current research.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>EUVL</subject><subject>Exact sciences and technology</subject><subject>HSFR</subject><subject>Ion beam</subject><subject>Machining</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>ULE</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kM9u2zAMh4VhA5alfYDddFlvdiVbtuT2NBTZWiDADlvOAq1QiQL_aUW7Q16qD7Enq4IUO_ZCgsD3I8GPsa9S5FLI-vqQ94h5IYTJpcyFUh_YQhpdZlVVm49skRidNaXUn9kXooNIsxJmwX6vx78cB4y7Iw_jwFuEnvfg9mEIw46Pnm_WK_7vhdPc0hRhQrrhq2foZphOfAJojh4c8jjOu_2ARBfsk4eO8PKtL9nmx-rP3X22_vXz4e77OnOqUFPWproFqVunlVe1cgLAS1HXReUr0zg03teubRuP0JSF0k1p6kK2UBkwLYhyya7Oex_j-DQjTbYP5LDrYMBxJluqKrnROoHyDLo4EkX09jGGHuLRSmFP-uzBJn32pM9KaZO-lPn2thzIQecjDC7Q_2AhddNURibu9sxh-vQ5YLTkAg4OtyGim-x2DO9ceQXCt4XE</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Inaba, Takuro</creator><creator>Kurashima, Yuichi</creator><creator>Pahlovy, Shahjada A.</creator><creator>Miyamoto, Iwao</creator><creator>Ando, Manabu</creator><creator>Numata, Atsushi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090401</creationdate><title>Low energy ion beam machining of ULE ® substrates: Evaluation of surface roughness</title><author>Inaba, Takuro ; Kurashima, Yuichi ; Pahlovy, Shahjada A. ; Miyamoto, Iwao ; Ando, Manabu ; Numata, Atsushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-b424da17bc74f464c0aaf106625f589ce8ff6cbb9fea93247938621ba58a8ba03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>EUVL</topic><topic>Exact sciences and technology</topic><topic>HSFR</topic><topic>Ion beam</topic><topic>Machining</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>ULE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Inaba, Takuro</creatorcontrib><creatorcontrib>Kurashima, Yuichi</creatorcontrib><creatorcontrib>Pahlovy, Shahjada A.</creatorcontrib><creatorcontrib>Miyamoto, Iwao</creatorcontrib><creatorcontrib>Ando, Manabu</creatorcontrib><creatorcontrib>Numata, Atsushi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Inaba, Takuro</au><au>Kurashima, Yuichi</au><au>Pahlovy, Shahjada A.</au><au>Miyamoto, Iwao</au><au>Ando, Manabu</au><au>Numata, Atsushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low energy ion beam machining of ULE ® substrates: Evaluation of surface roughness</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>86</volume><issue>4</issue><spage>497</spage><epage>499</epage><pages>497-499</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>In order to apply ion beam figuring (IBF) to final shape correction of the substrates of projection optics for EUVL, ion beam machining characteristics such as high-spatial frequency roughness (HSFR) and mid-spatial frequency surface roughness (MSFR) of ULE
® substrate were investigated. Our previous research confirmed that the surface roughness of the ULE
® machined by Ar
+ ion beam with energy of 3–10
keV decreases with decreasing the ion beam energy. Therefore, we have conducted our research on ion beam machining of ULE
® substrate by Ar
+ ion beam with energy from 0.2 to 2
keV. The HSFR and MSFR of the mechanically pre-finished ULE
® substrate were 0.06 and 0.07
nm
rms, respectively; whereas, the HSFR and MSFR of the substrate irradiated by Ar
+ ion beam at energy of 0.3
keV were less than 0.10 and 0.08
nm
rms, respectively. The HSFR is the best result among our previous and other current research.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2008.11.044</doi><tpages>3</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2009-04, Vol.86 (4), p.497-499 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Applied sciences Electronics EUVL Exact sciences and technology HSFR Ion beam Machining Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ULE |
| title | Low energy ion beam machining of ULE ® substrates: Evaluation of surface roughness |
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