Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN 1− x As x alloys over a large composition range by growing the films much below the normal GaN growth temperature...

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Veröffentlicht in:	Journal of crystal growth 2009-06, Vol.311 (13), p.3417-3422
Hauptverfasser:	Novikov, S.V., Staddon, C.R., Akimov, A.V., Campion, R.P., Zainal, N., Kent, A.J., Foxon, C.T., Chen, C.H., Yu, K.M., Walukiewicz, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology General studies of phase transitions Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Order-disorder and statistical mechanics of model systems Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Beschreibung
Zusammenfassung:	We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN 1− x As x alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As 2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2009.04.010