Growth of GaN on nano-crystalline diamond substrates

In this study GaN has been grown on nano-crystalline diamond substrates utilizing metal-organic chemical vapour deposition (MOCVD). It is shown that the growth of closed GaN films onto synthetic diamond substrates is feasible, when applying the correct buffer layer and growth parameters. XRD measure...

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Veröffentlicht in:	Diamond and related materials 2009-05, Vol.18 (5), p.1043-1047
Hauptverfasser:	van Dreumel, G.W.G., Buijnsters, J.G., Bohnen, T., ter Meulen, J.J., Hageman, P.R., van Enckevort, W.J.P., Vlieg, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemical vapour deposition (CVD) Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Gallium nitride (GaN) Heterostructures Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Specific materials Synthetic diamond Theory and models of film growth
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