Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance
We report on the development of GaN-based light-emitting diode with a Au nanoparticles arrayed layer for increasing the light output. Au nanoparticles are used for enhancing the light extraction efficiency. Au nanoparticles induce a localized surface plasmon resonance (LSPR). This effect performs ex...
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| Veröffentlicht in: | Microelectronic engineering 2009-04, Vol.86 (4), p.1120-1123 |
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| container_title | Microelectronic engineering |
| container_volume | 86 |
| creator | Sung, Jun-Ho Kim, Bo-Soon Choi, Chul-Hyun Lee, Min-Woo Lee, Seung-Gol Park, Se-Geun Lee, El-Hang Beom-Hoan, O. |
| description | We report on the development of GaN-based light-emitting diode with a Au nanoparticles arrayed layer for increasing the light output. Au nanoparticles are used for enhancing the light extraction efficiency. Au nanoparticles induce a localized surface plasmon resonance (LSPR). This effect performs extracting the trapped light in a device, and then, enhances the luminous efficiency of LEDs. Au nanoparticles arrayed layers were fabricated by sputtering and annealing processes. The size and filling factor of particles can be controlled by the three conditions, such as a deposited film thickness, annealing temperature and time. These are important factors to determine the efficiency, because a LSPR depends on both of the size and density of particles. With a 20
mA current injected onto the LED, an enhancement of 1.8 times in electroluminescence intensity was observed. By comparing this with a conventional LED, both LSPR effect and scattering by rough surface contribute to the enhancement of emission. |
| doi_str_mv | 10.1016/j.mee.2009.01.009 |
| format | Article |
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mA current injected onto the LED, an enhancement of 1.8 times in electroluminescence intensity was observed. By comparing this with a conventional LED, both LSPR effect and scattering by rough surface contribute to the enhancement of emission.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2009.01.009</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Gold nanoparticle ; Light-emitting diode ; Localized surface plasmon ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2009-04, Vol.86 (4), p.1120-1123</ispartof><rights>2009</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-7f7f97238af6c3410ab8cda5e6ebeebf04a067cd53d7ed763dc52c3c34d78cf3</citedby><cites>FETCH-LOGICAL-c358t-7f7f97238af6c3410ab8cda5e6ebeebf04a067cd53d7ed763dc52c3c34d78cf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931709000185$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21799744$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sung, Jun-Ho</creatorcontrib><creatorcontrib>Kim, Bo-Soon</creatorcontrib><creatorcontrib>Choi, Chul-Hyun</creatorcontrib><creatorcontrib>Lee, Min-Woo</creatorcontrib><creatorcontrib>Lee, Seung-Gol</creatorcontrib><creatorcontrib>Park, Se-Geun</creatorcontrib><creatorcontrib>Lee, El-Hang</creatorcontrib><creatorcontrib>Beom-Hoan, O.</creatorcontrib><title>Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance</title><title>Microelectronic engineering</title><description>We report on the development of GaN-based light-emitting diode with a Au nanoparticles arrayed layer for increasing the light output. Au nanoparticles are used for enhancing the light extraction efficiency. Au nanoparticles induce a localized surface plasmon resonance (LSPR). This effect performs extracting the trapped light in a device, and then, enhances the luminous efficiency of LEDs. Au nanoparticles arrayed layers were fabricated by sputtering and annealing processes. The size and filling factor of particles can be controlled by the three conditions, such as a deposited film thickness, annealing temperature and time. These are important factors to determine the efficiency, because a LSPR depends on both of the size and density of particles. With a 20
mA current injected onto the LED, an enhancement of 1.8 times in electroluminescence intensity was observed. By comparing this with a conventional LED, both LSPR effect and scattering by rough surface contribute to the enhancement of emission.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gold nanoparticle</subject><subject>Light-emitting diode</subject><subject>Localized surface plasmon</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAUhC0EEqXwA9i8wJZgx0mciAlVpSBVsHS3HPu5dZXExU5A8Otx1IqR6fTk7866Q-iWkpQSWj7s0w4gzQipU0LTKGdoRivOkqIoq3M0iwxPakb5JboKYU_inZNqhpplv5O9Ao3bsbM9BAXxws7glXxLGhmmF7vdDQl0dhhsv8XaOg34yw47LHHrlGztT6TC6I2M1kMrQ-d67CG4foq-RhdGtgFuTjpHm-flZvGSrN9Xr4undaJYUQ0JN9zUPGOVNKViOSWyqZSWBZTQADSG5JKUXOmCaQ6al0yrIlMsoppXyrA5uj_GHrz7GCEMorOxTdvKHtwYBMvzuiaMRpAeQeVdCB6MOHjbSf8tKBHTmGIv4phiGlMQKqJEz90pXIZY2PhYzIY_Y0Z5XfM8j9zjkYNY9NOCF0HZaVFtPahBaGf_-eUXDvqLzQ</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Sung, Jun-Ho</creator><creator>Kim, Bo-Soon</creator><creator>Choi, Chul-Hyun</creator><creator>Lee, Min-Woo</creator><creator>Lee, Seung-Gol</creator><creator>Park, Se-Geun</creator><creator>Lee, El-Hang</creator><creator>Beom-Hoan, O.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090401</creationdate><title>Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance</title><author>Sung, Jun-Ho ; Kim, Bo-Soon ; Choi, Chul-Hyun ; Lee, Min-Woo ; Lee, Seung-Gol ; Park, Se-Geun ; Lee, El-Hang ; Beom-Hoan, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-7f7f97238af6c3410ab8cda5e6ebeebf04a067cd53d7ed763dc52c3c34d78cf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gold nanoparticle</topic><topic>Light-emitting diode</topic><topic>Localized surface plasmon</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sung, Jun-Ho</creatorcontrib><creatorcontrib>Kim, Bo-Soon</creatorcontrib><creatorcontrib>Choi, Chul-Hyun</creatorcontrib><creatorcontrib>Lee, Min-Woo</creatorcontrib><creatorcontrib>Lee, Seung-Gol</creatorcontrib><creatorcontrib>Park, Se-Geun</creatorcontrib><creatorcontrib>Lee, El-Hang</creatorcontrib><creatorcontrib>Beom-Hoan, O.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sung, Jun-Ho</au><au>Kim, Bo-Soon</au><au>Choi, Chul-Hyun</au><au>Lee, Min-Woo</au><au>Lee, Seung-Gol</au><au>Park, Se-Geun</au><au>Lee, El-Hang</au><au>Beom-Hoan, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>86</volume><issue>4</issue><spage>1120</spage><epage>1123</epage><pages>1120-1123</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>We report on the development of GaN-based light-emitting diode with a Au nanoparticles arrayed layer for increasing the light output. Au nanoparticles are used for enhancing the light extraction efficiency. Au nanoparticles induce a localized surface plasmon resonance (LSPR). This effect performs extracting the trapped light in a device, and then, enhances the luminous efficiency of LEDs. Au nanoparticles arrayed layers were fabricated by sputtering and annealing processes. The size and filling factor of particles can be controlled by the three conditions, such as a deposited film thickness, annealing temperature and time. These are important factors to determine the efficiency, because a LSPR depends on both of the size and density of particles. With a 20
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Gold nanoparticle Light-emitting diode Localized surface plasmon Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance |
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