Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE
Redistribution behavior of magnesium (Mg) in the N-terminated (1 1¯ 0 1) gallium nitride (GaN) has been investigated. A nominally undoped GaN layer was grown on a heavily Mg-doped GaN template by metalorganic vapor-phase epitaxy (MOVPE). Mg dopant profiles were measured by secondary ion mass spectro...
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Veröffentlicht in: | Journal of crystal growth 2009-05, Vol.311 (10), p.2883-2886 |
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creator | Tomita, Kazuyoshi Hikosaka, Toshiki Kachi, Tetsu Sawaki, Nobuhiko |
description | Redistribution behavior of magnesium (Mg) in the N-terminated (1
1¯
0
1) gallium nitride (GaN) has been investigated. A nominally undoped GaN layer was grown on a heavily Mg-doped GaN template by metalorganic vapor-phase epitaxy (MOVPE). Mg dopant profiles were measured by secondary ion mass spectrometry (SIMS) analysis. A slow decay of the Mg concentration was observed in the nominally undoped GaN layer due to the surface segregation. The calculated decay lengths of the (1
1¯
0
1) GaN are ∼75–85
nm/decade. These values are shorter than the decay length determined in the sample grown on the Ga-terminated (0
0
0
1) GaN. This result indicates that Mg exhibited weak surface segregation in the (1
1¯
0
1) GaN as compared to the (0
0
0
1) GaN. The weak surface segregation is in agreement with the high efficiency of Mg incorporation on the (1
1¯
0
1) face. The high density of hydrogen was obtained in the (1
1¯
0
1) GaN, which might enhance the Mg incorporation. |
doi_str_mv | 10.1016/j.jcrysgro.2009.01.035 |
format | Article |
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1¯
0
1) gallium nitride (GaN) has been investigated. A nominally undoped GaN layer was grown on a heavily Mg-doped GaN template by metalorganic vapor-phase epitaxy (MOVPE). Mg dopant profiles were measured by secondary ion mass spectrometry (SIMS) analysis. A slow decay of the Mg concentration was observed in the nominally undoped GaN layer due to the surface segregation. The calculated decay lengths of the (1
1¯
0
1) GaN are ∼75–85
nm/decade. These values are shorter than the decay length determined in the sample grown on the Ga-terminated (0
0
0
1) GaN. This result indicates that Mg exhibited weak surface segregation in the (1
1¯
0
1) GaN as compared to the (0
0
0
1) GaN. The weak surface segregation is in agreement with the high efficiency of Mg incorporation on the (1
1¯
0
1) face. The high density of hydrogen was obtained in the (1
1¯
0
1) GaN, which might enhance the Mg incorporation.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.01.035</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A1. Segregation ; A3. Metalorganic vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting III–V materials ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Other semiconductors ; Physics ; Specific materials ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2009-05, Vol.311 (10), p.2883-2886</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-d415c18218eaea8a5de97d5e41b819463003a28769fd0fcf436126ecd59647ee3</citedby><cites>FETCH-LOGICAL-c354t-d415c18218eaea8a5de97d5e41b819463003a28769fd0fcf436126ecd59647ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2009.01.035$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21815455$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tomita, Kazuyoshi</creatorcontrib><creatorcontrib>Hikosaka, Toshiki</creatorcontrib><creatorcontrib>Kachi, Tetsu</creatorcontrib><creatorcontrib>Sawaki, Nobuhiko</creatorcontrib><title>Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE</title><title>Journal of crystal growth</title><description>Redistribution behavior of magnesium (Mg) in the N-terminated (1
1¯
0
1) gallium nitride (GaN) has been investigated. A nominally undoped GaN layer was grown on a heavily Mg-doped GaN template by metalorganic vapor-phase epitaxy (MOVPE). Mg dopant profiles were measured by secondary ion mass spectrometry (SIMS) analysis. A slow decay of the Mg concentration was observed in the nominally undoped GaN layer due to the surface segregation. The calculated decay lengths of the (1
1¯
0
1) GaN are ∼75–85
nm/decade. These values are shorter than the decay length determined in the sample grown on the Ga-terminated (0
0
0
1) GaN. This result indicates that Mg exhibited weak surface segregation in the (1
1¯
0
1) GaN as compared to the (0
0
0
1) GaN. The weak surface segregation is in agreement with the high efficiency of Mg incorporation on the (1
1¯
0
1) face. The high density of hydrogen was obtained in the (1
1¯
0
1) GaN, which might enhance the Mg incorporation.</description><subject>A1. Doping</subject><subject>A1. Segregation</subject><subject>A3. Metalorganic vapor-phase epitaxy</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting III–V materials</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkMlOwzAQhi0EEmV5BeQLqBwSZhI7yw1UlUVik1gkTpbrTCpXJSl2CvSp4Bl4MlwVuHIZH-b7Z8YfY3sIMQJmR5N4YtzCj10bJwBlDBhDKtdYD4s8jSRAss56oSYRJKLYZFveTwBCEqHHnq7G3NPY0Vh3tm24bbjmfeT49cGB4yE_09c8jH5reLts5V-fvK3rSL9bz_uwYu4s9_OR75zuiI8W_Orm8Xa4wzZqPfW0-_Nus4fT4f3gPLq8ObsYnFxGJpWiiyqB0mCRYEGadKFlRWVeSRI4KrAUWQqQ6qTIs7KuoDa1SDNMMjKVLDORE6Xb7GA1d-balzn5Tj1bb2g61Q21c69SIcoimAhgtgKNa713VKuZs8_aLRSCWppUE_VrUi1NKkAVTIbg_s8G7Y2e1k43xvq_dDgdpZBL7njFUfjuqyWnvLHUGKqsI9OpqrX_rfoG_62JRQ</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Tomita, Kazuyoshi</creator><creator>Hikosaka, Toshiki</creator><creator>Kachi, Tetsu</creator><creator>Sawaki, Nobuhiko</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090501</creationdate><title>Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE</title><author>Tomita, Kazuyoshi ; Hikosaka, Toshiki ; Kachi, Tetsu ; Sawaki, Nobuhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-d415c18218eaea8a5de97d5e41b819463003a28769fd0fcf436126ecd59647ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Doping</topic><topic>A1. Segregation</topic><topic>A3. Metalorganic vapor-phase epitaxy</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III–V materials</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tomita, Kazuyoshi</creatorcontrib><creatorcontrib>Hikosaka, Toshiki</creatorcontrib><creatorcontrib>Kachi, Tetsu</creatorcontrib><creatorcontrib>Sawaki, Nobuhiko</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tomita, Kazuyoshi</au><au>Hikosaka, Toshiki</au><au>Kachi, Tetsu</au><au>Sawaki, Nobuhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-05-01</date><risdate>2009</risdate><volume>311</volume><issue>10</issue><spage>2883</spage><epage>2886</epage><pages>2883-2886</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Redistribution behavior of magnesium (Mg) in the N-terminated (1
1¯
0
1) gallium nitride (GaN) has been investigated. A nominally undoped GaN layer was grown on a heavily Mg-doped GaN template by metalorganic vapor-phase epitaxy (MOVPE). Mg dopant profiles were measured by secondary ion mass spectrometry (SIMS) analysis. A slow decay of the Mg concentration was observed in the nominally undoped GaN layer due to the surface segregation. The calculated decay lengths of the (1
1¯
0
1) GaN are ∼75–85
nm/decade. These values are shorter than the decay length determined in the sample grown on the Ga-terminated (0
0
0
1) GaN. This result indicates that Mg exhibited weak surface segregation in the (1
1¯
0
1) GaN as compared to the (0
0
0
1) GaN. The weak surface segregation is in agreement with the high efficiency of Mg incorporation on the (1
1¯
0
1) face. The high density of hydrogen was obtained in the (1
1¯
0
1) GaN, which might enhance the Mg incorporation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2009.01.035</doi><tpages>4</tpages></addata></record> |
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subjects | A1. Doping A1. Segregation A3. Metalorganic vapor-phase epitaxy B1. Nitrides B2. Semiconducting III–V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Specific materials Vapor phase epitaxy growth from vapor phase |
title | Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE |
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