Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications
Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias,...
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| Veröffentlicht in: | IEEE photonics technology letters 2008-08, Vol.20 (16), p.1396-1398 |
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| container_title | IEEE photonics technology letters |
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| creator | Zhu, S. Lo, G.Q. Kwong, D.L. |
| description | Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias, with very weak dependence on wavelength ranging from 1520 to 1620 nm. Compared to the silicide Schottky-barrier photodiode with the same NiSi 2 absorber, the MSM detectors offer the benefits of high speed, large responsivity, and ease of fabrication. Approaches for optimization are addressed. |
| doi_str_mv | 10.1109/LPT.2008.927876 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_34498599</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4579338</ieee_id><sourcerecordid>875086583</sourcerecordid><originalsourceid>FETCH-LOGICAL-c417t-6b7aa261c44b67d8462af4051a2f4e148ec8cde141db1358366a187b4283ebe93</originalsourceid><addsrcrecordid>eNp9kc1L9DAYxIso-Hn24CV40FPXpEmT9KiLX7CywioeQ5o-1fh2mzVJFQ_-76bsiwcPnjIZZn7wMFl2SPCEEFydze4fJgXGclIVQgq-ke2QipEcE8E2k8ZJE0LL7Ww3hFeMCSsp28m-Zu4jn7oQke4bdGOfX_LFCqBBi_ktetLv8DzYBvILHUbPdtakL1qYFxfjv8_ke2_Bo7vFHbpPnmsggonOB9Q6jy680009kueraI3u0NQtl0OfZLSuD_vZVqu7AAf_373s8eryYXqTz-bXt9PzWW4YETHntdC64MQwVnPRSMYL3TJcEl20DAiTYKRpkiBNnU6UlHNNpKhZISnUUNG97HTNXXn3NkCIammDga7TPbghKClKLHkqpuTJn0nKWCXLakQe_wq-usH36QoleVElVDHSztYh410IHlq18nap_aciWI2rqbSaGldT69VS42jdsADwk2alqCiV9BtHxZLc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862983323</pqid></control><display><type>article</type><title>Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications</title><source>IEEE Electronic Library (IEL)</source><creator>Zhu, S. ; Lo, G.Q. ; Kwong, D.L.</creator><creatorcontrib>Zhu, S. ; Lo, G.Q. ; Kwong, D.L.</creatorcontrib><description>Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias, with very weak dependence on wavelength ranging from 1520 to 1620 nm. Compared to the silicide Schottky-barrier photodiode with the same NiSi 2 absorber, the MSM detectors offer the benefits of high speed, large responsivity, and ease of fabrication. Approaches for optimization are addressed.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2008.927876</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Bias ; Broadband communication ; Detectors ; Fabrication ; High speed ; Intermetallics ; Metal-semiconductor-metal (MSM) ; near- infrared ; Optical fiber communication ; Optical waveguides ; Optimization ; photodetector (PD) ; Photodetectors ; Photodiodes ; Schottky-barrier ; silicide ; Silicides ; silicon (Si) optoelectronics ; Silicon on insulator technology ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1396-1398</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c417t-6b7aa261c44b67d8462af4051a2f4e148ec8cde141db1358366a187b4283ebe93</citedby><cites>FETCH-LOGICAL-c417t-6b7aa261c44b67d8462af4051a2f4e148ec8cde141db1358366a187b4283ebe93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4579338$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4579338$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhu, S.</creatorcontrib><creatorcontrib>Lo, G.Q.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><title>Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias, with very weak dependence on wavelength ranging from 1520 to 1620 nm. Compared to the silicide Schottky-barrier photodiode with the same NiSi 2 absorber, the MSM detectors offer the benefits of high speed, large responsivity, and ease of fabrication. Approaches for optimization are addressed.</description><subject>Bandwidth</subject><subject>Bias</subject><subject>Broadband communication</subject><subject>Detectors</subject><subject>Fabrication</subject><subject>High speed</subject><subject>Intermetallics</subject><subject>Metal-semiconductor-metal (MSM)</subject><subject>near- infrared</subject><subject>Optical fiber communication</subject><subject>Optical waveguides</subject><subject>Optimization</subject><subject>photodetector (PD)</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Schottky-barrier</subject><subject>silicide</subject><subject>Silicides</subject><subject>silicon (Si) optoelectronics</subject><subject>Silicon on insulator technology</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1L9DAYxIso-Hn24CV40FPXpEmT9KiLX7CywioeQ5o-1fh2mzVJFQ_-76bsiwcPnjIZZn7wMFl2SPCEEFydze4fJgXGclIVQgq-ke2QipEcE8E2k8ZJE0LL7Ww3hFeMCSsp28m-Zu4jn7oQke4bdGOfX_LFCqBBi_ktetLv8DzYBvILHUbPdtakL1qYFxfjv8_ke2_Bo7vFHbpPnmsggonOB9Q6jy680009kueraI3u0NQtl0OfZLSuD_vZVqu7AAf_373s8eryYXqTz-bXt9PzWW4YETHntdC64MQwVnPRSMYL3TJcEl20DAiTYKRpkiBNnU6UlHNNpKhZISnUUNG97HTNXXn3NkCIammDga7TPbghKClKLHkqpuTJn0nKWCXLakQe_wq-usH36QoleVElVDHSztYh410IHlq18nap_aciWI2rqbSaGldT69VS42jdsADwk2alqCiV9BtHxZLc</recordid><startdate>20080815</startdate><enddate>20080815</enddate><creator>Zhu, S.</creator><creator>Lo, G.Q.</creator><creator>Kwong, D.L.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080815</creationdate><title>Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications</title><author>Zhu, S. ; Lo, G.Q. ; Kwong, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c417t-6b7aa261c44b67d8462af4051a2f4e148ec8cde141db1358366a187b4283ebe93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bandwidth</topic><topic>Bias</topic><topic>Broadband communication</topic><topic>Detectors</topic><topic>Fabrication</topic><topic>High speed</topic><topic>Intermetallics</topic><topic>Metal-semiconductor-metal (MSM)</topic><topic>near- infrared</topic><topic>Optical fiber communication</topic><topic>Optical waveguides</topic><topic>Optimization</topic><topic>photodetector (PD)</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Schottky-barrier</topic><topic>silicide</topic><topic>Silicides</topic><topic>silicon (Si) optoelectronics</topic><topic>Silicon on insulator technology</topic><topic>Wavelengths</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhu, S.</creatorcontrib><creatorcontrib>Lo, G.Q.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhu, S.</au><au>Lo, G.Q.</au><au>Kwong, D.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2008-08-15</date><risdate>2008</risdate><volume>20</volume><issue>16</issue><spage>1396</spage><epage>1398</epage><pages>1396-1398</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias, with very weak dependence on wavelength ranging from 1520 to 1620 nm. Compared to the silicide Schottky-barrier photodiode with the same NiSi 2 absorber, the MSM detectors offer the benefits of high speed, large responsivity, and ease of fabrication. Approaches for optimization are addressed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2008.927876</doi><tpages>3</tpages></addata></record> |
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| subjects | Bandwidth Bias Broadband communication Detectors Fabrication High speed Intermetallics Metal-semiconductor-metal (MSM) near- infrared Optical fiber communication Optical waveguides Optimization photodetector (PD) Photodetectors Photodiodes Schottky-barrier silicide Silicides silicon (Si) optoelectronics Silicon on insulator technology Wavelengths |
| title | Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T14%3A35%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-Cost%20and%20High-Speed%20SOI%20Waveguide-Based%20Silicide%20Schottky-Barrier%20MSM%20Photodetectors%20for%20Broadband%20Optical%20Communications&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Zhu,%20S.&rft.date=2008-08-15&rft.volume=20&rft.issue=16&rft.spage=1396&rft.epage=1398&rft.pages=1396-1398&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2008.927876&rft_dat=%3Cproquest_RIE%3E875086583%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862983323&rft_id=info:pmid/&rft_ieee_id=4579338&rfr_iscdi=true |