Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
Magnesium oxide (MgO) thin films were deposited onto silicon substrates, from an MgO target, by electron beam evaporation. The ambient stability of the MgO films and the formation of the MgO/Si interface were analysed using standard X-ray photoelectron spectroscopy (XPS) and high resolution synchrot...
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| Veröffentlicht in: | Microelectronic engineering 2009-07, Vol.86 (7), p.1711-1714 |
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| container_title | Microelectronic engineering |
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| creator | Casey, P. O’Connor, E. Long, R. Brennan, B. Krasnikov, S.A. O’Connell, D. Hurley, P.K. Hughes, G. |
| description | Magnesium oxide (MgO) thin films were deposited onto silicon substrates, from an MgO target, by electron beam evaporation. The ambient stability of the MgO films and the formation of the MgO/Si interface were analysed using standard X-ray photoelectron spectroscopy (XPS) and high resolution synchrotron radiation based photoemission. Ambient exposure of the deposited films results in the growth of magnesium hydroxide and magnesium carbide species which can be desorbed by annealing at 500
°C in an inert atmosphere. Electrical characterisation has been performed on nickel silicide/MgO/Si(1
0
0) MOS structures for different dielectric thicknesses. The
C–
V results show no evidence of a low-
k layer at the MgO/Si interface. |
| doi_str_mv | 10.1016/j.mee.2009.03.046 |
| format | Article |
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°C in an inert atmosphere. Electrical characterisation has been performed on nickel silicide/MgO/Si(1
0
0) MOS structures for different dielectric thicknesses. The
C–
V results show no evidence of a low-
k layer at the MgO/Si interface.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2009.03.046</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Compound structure devices ; C– V characterisation ; Electronics ; Exact sciences and technology ; High resolution photoemission ; MgO ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Ultrathin dielectric layers</subject><ispartof>Microelectronic engineering, 2009-07, Vol.86 (7), p.1711-1714</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-62a32f5bcf8203d7f67856d0935657de74c1f49b0f066ab54f08a7eb68b22d4b3</citedby><cites>FETCH-LOGICAL-c358t-62a32f5bcf8203d7f67856d0935657de74c1f49b0f066ab54f08a7eb68b22d4b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2009.03.046$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21815320$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Casey, P.</creatorcontrib><creatorcontrib>O’Connor, E.</creatorcontrib><creatorcontrib>Long, R.</creatorcontrib><creatorcontrib>Brennan, B.</creatorcontrib><creatorcontrib>Krasnikov, S.A.</creatorcontrib><creatorcontrib>O’Connell, D.</creatorcontrib><creatorcontrib>Hurley, P.K.</creatorcontrib><creatorcontrib>Hughes, G.</creatorcontrib><title>Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces</title><title>Microelectronic engineering</title><description>Magnesium oxide (MgO) thin films were deposited onto silicon substrates, from an MgO target, by electron beam evaporation. The ambient stability of the MgO films and the formation of the MgO/Si interface were analysed using standard X-ray photoelectron spectroscopy (XPS) and high resolution synchrotron radiation based photoemission. Ambient exposure of the deposited films results in the growth of magnesium hydroxide and magnesium carbide species which can be desorbed by annealing at 500
°C in an inert atmosphere. Electrical characterisation has been performed on nickel silicide/MgO/Si(1
0
0) MOS structures for different dielectric thicknesses. The
C–
V results show no evidence of a low-
k layer at the MgO/Si interface.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>C– V characterisation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>High resolution photoemission</subject><subject>MgO</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Ultrathin dielectric layers</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wFsuenLXZLP5WDyJaBWUXvQcstmJTdkPTVKl_96UikdPwwzv-87Mg9A5JSUlVFyvywGgrAhpSsJKUosDNKNKsoJzoQ7RLGtk0TAqj9FJjGuS-5qoGdKLMH2n1RU2Q-thTDgm0_repy02Y4ehB5uCt6bHdmWCsQmCjyb5acSTwy_vS5xWfsTO90PEeRiz1-7qJjhjIZ6iI2f6CGe_dY7eHu5f7x6L5-Xi6e72ubCMq1SIyrDK8dY6VRHWSSek4qIjDeOCyw5kbamrm5Y4IoRpee2IMhJaodqq6uqWzdHlPvcjTJ8biEkPPlroezPCtIma1XUjVcWzkO6FNkwxBnD6I_jBhK2mRO9Q6rXOKPUOpSZMZ5TZc_EbbmJG4YIZrY9_xooqylm-e45u9jrIn355CDraDNVC50PmqLvJ_7PlB8oBicA</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Casey, P.</creator><creator>O’Connor, E.</creator><creator>Long, R.</creator><creator>Brennan, B.</creator><creator>Krasnikov, S.A.</creator><creator>O’Connell, D.</creator><creator>Hurley, P.K.</creator><creator>Hughes, G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090701</creationdate><title>Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces</title><author>Casey, P. ; O’Connor, E. ; Long, R. ; Brennan, B. ; Krasnikov, S.A. ; O’Connell, D. ; Hurley, P.K. ; Hughes, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-62a32f5bcf8203d7f67856d0935657de74c1f49b0f066ab54f08a7eb68b22d4b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>C– V characterisation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>High resolution photoemission</topic><topic>MgO</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Ultrathin dielectric layers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Casey, P.</creatorcontrib><creatorcontrib>O’Connor, E.</creatorcontrib><creatorcontrib>Long, R.</creatorcontrib><creatorcontrib>Brennan, B.</creatorcontrib><creatorcontrib>Krasnikov, S.A.</creatorcontrib><creatorcontrib>O’Connell, D.</creatorcontrib><creatorcontrib>Hurley, P.K.</creatorcontrib><creatorcontrib>Hughes, G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Casey, P.</au><au>O’Connor, E.</au><au>Long, R.</au><au>Brennan, B.</au><au>Krasnikov, S.A.</au><au>O’Connell, D.</au><au>Hurley, P.K.</au><au>Hughes, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-07-01</date><risdate>2009</risdate><volume>86</volume><issue>7</issue><spage>1711</spage><epage>1714</epage><pages>1711-1714</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Magnesium oxide (MgO) thin films were deposited onto silicon substrates, from an MgO target, by electron beam evaporation. The ambient stability of the MgO films and the formation of the MgO/Si interface were analysed using standard X-ray photoelectron spectroscopy (XPS) and high resolution synchrotron radiation based photoemission. Ambient exposure of the deposited films results in the growth of magnesium hydroxide and magnesium carbide species which can be desorbed by annealing at 500
°C in an inert atmosphere. Electrical characterisation has been performed on nickel silicide/MgO/Si(1
0
0) MOS structures for different dielectric thicknesses. The
C–
V results show no evidence of a low-
k layer at the MgO/Si interface.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2009.03.046</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2009-07, Vol.86 (7), p.1711-1714 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Compound structure devices C– V characterisation Electronics Exact sciences and technology High resolution photoemission MgO Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Ultrathin dielectric layers |
| title | Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces |
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