Molecular beam epitaxial growth of hexagonal boron nitride on Ni(1 1 1) substrate

We demonstrate hexagonal boron nitride ( h-BN) epitaxial growth on Ni(1 1 1) substrate by molecular beam epitaxy (MBE) at 890 °C. Elemental boron evaporated by an electron-beam gun and active nitrogen generated by a radio-frequency (RF) plasma source were used as the group-III and -V sources, respec...

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Veröffentlicht in:	Journal of crystal growth 2009-05, Vol.311 (10), p.3054-3057
Hauptverfasser:	Tsai, C.L., Kobayashi, Y., Akasaka, T., Kasu, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electron diffraction and scattering Exact sciences and technology Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed) Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
Online-Zugang:	Volltext
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