Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling

Reactions of H 2 in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydr...

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Veröffentlicht in:	IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3039-3045
Hauptverfasser:	Batyrev, I.G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B.R., Fleetwood, D.M., Schrimpf, R.D., Rashkeev, S.N., Dunham, G.W., Law, M., Pantelides, S.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Borders Computer simulation Cranes Current measurement DEFECTS Equations Fracture mechanics HYDROGEN Hydrogen soak Ionizing radiation IONIZING RADIATIONS MATERIALS SCIENCE Mathematical analysis Mathematical models OXYGEN oxygen vacancy PROTONS radiation RADIATIONS SIMULATION simulations Solid modeling Temporal logic Testing TRANSISTORS VACANCIES Voltage
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