Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling
Reactions of H 2 in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydr...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3039-3045 |
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| creator | Batyrev, I.G. Hughart, D. Durand, R. Bounasser, M. Tuttle, B.R. Fleetwood, D.M. Schrimpf, R.D. Rashkeev, S.N. Dunham, G.W. Law, M. Pantelides, S.T. |
| description | Reactions of H 2 in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs. |
| doi_str_mv | 10.1109/TNS.2008.2009353 |
| format | Article |
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Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2008.2009353</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bipolar transistors ; Borders ; Computer simulation ; Cranes ; Current measurement ; DEFECTS ; Equations ; Fracture mechanics ; HYDROGEN ; Hydrogen soak ; Ionizing radiation ; IONIZING RADIATIONS ; MATERIALS SCIENCE ; Mathematical analysis ; Mathematical models ; OXYGEN ; oxygen vacancy ; PROTONS ; radiation ; RADIATIONS ; SIMULATION ; simulations ; Solid modeling ; Temporal logic ; Testing ; TRANSISTORS ; VACANCIES ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3039-3045</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.</description><subject>Bipolar transistors</subject><subject>Borders</subject><subject>Computer simulation</subject><subject>Cranes</subject><subject>Current measurement</subject><subject>DEFECTS</subject><subject>Equations</subject><subject>Fracture mechanics</subject><subject>HYDROGEN</subject><subject>Hydrogen soak</subject><subject>Ionizing radiation</subject><subject>IONIZING RADIATIONS</subject><subject>MATERIALS SCIENCE</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>OXYGEN</subject><subject>oxygen vacancy</subject><subject>PROTONS</subject><subject>radiation</subject><subject>RADIATIONS</subject><subject>SIMULATION</subject><subject>simulations</subject><subject>Solid modeling</subject><subject>Temporal logic</subject><subject>Testing</subject><subject>TRANSISTORS</subject><subject>VACANCIES</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90c9rFTEQB_AgCj6rd8FL9KCnrUk2P71peW2FqlCfRwlpMmlTtsma7AP735vlFQ8ePCRh4DOBmS9CLyk5ppSY97uv348ZIXq9zCjGR2hDhdADFUo_RhtCqB4MN-YpetbabS-5IGKDfm5jBL80XCI-vw-1XEPGJePlBvClC8ktqVeX0OaSG6zqU5rL5CreVZdbakup7QPe_p6hpjvIC3Y54C8lwJTy9XP0JLqpwYuH9wj9ON3uTs6Hi29nn08-Xgx-VGYZItOgQUTmojdaxivNmAqBOqPNleImBiUkkS7w4Jl0BCgZu_fG6-DVKMcj9Prwb2lLss2nBfyNLzn30awRhPDVvDuYuZZfe2iLvUvNwzS5DGXfrFaCyH50l2__K0fODZdEdfjmH3hb9jX3Sa2hjAkpDeuIHJCvpbUK0c59U67eW0rsGp3t0dk1OvsQXW95dWhJAPCXc8VGJdj4B9rBlDo</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Batyrev, I.G.</creator><creator>Hughart, D.</creator><creator>Durand, R.</creator><creator>Bounasser, M.</creator><creator>Tuttle, B.R.</creator><creator>Fleetwood, D.M.</creator><creator>Schrimpf, R.D.</creator><creator>Rashkeev, S.N.</creator><creator>Dunham, G.W.</creator><creator>Law, M.</creator><creator>Pantelides, S.T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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R.</au><au>Bounasser, M.</au><au>Tuttle, B.R.</au><au>Fleetwood, D.M.</au><au>Schrimpf, R.D.</au><au>Rashkeev, S.N.</au><au>Dunham, G.W.</au><au>Law, M.</au><au>Pantelides, S.T.</au><aucorp>Idaho National Laboratory (INL)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>55</volume><issue>6</issue><spage>3039</spage><epage>3045</epage><pages>3039-3045</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Reactions of H 2 in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2008.2009353</doi><tpages>7</tpages></addata></record> |
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| subjects | Bipolar transistors Borders Computer simulation Cranes Current measurement DEFECTS Equations Fracture mechanics HYDROGEN Hydrogen soak Ionizing radiation IONIZING RADIATIONS MATERIALS SCIENCE Mathematical analysis Mathematical models OXYGEN oxygen vacancy PROTONS radiation RADIATIONS SIMULATION simulations Solid modeling Temporal logic Testing TRANSISTORS VACANCIES Voltage |
| title | Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling |
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