Homoepitaxy on bulk ammonothermal GaN
In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very...
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| Veröffentlicht in: | Journal of crystal growth 2009-05, Vol.311 (10), p.3058-3062 |
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| container_title | Journal of crystal growth |
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| creator | Dwilinski, R. Doradzinski, R. Garczynski, J. Sierzputowski, L.P. Zajac, M. Rudzinski, M. |
| description | In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very intensive, perfectly resolved excitonic structure in range of band-edge emission of gallium nitride. This structure consists of both lines related to free excitons emission and very narrow lines (full-width at half-maximum (FWHM) value of the order of 0.3
meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers. |
| doi_str_mv | 10.1016/j.jcrysgro.2009.01.078 |
| format | Article |
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meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.01.078</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Homoepitaxy ; A1. Optical properties ; A2. Ammonothermal crystal growth ; A3. Metalorganic chemical vapor deposition ; B1. Gallium nitride ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Photoluminescence ; Physics</subject><ispartof>Journal of crystal growth, 2009-05, Vol.311 (10), p.3058-3062</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-e819e5f9763e3cbad1c58c1067b2b3d6813f064c485a0e0b894b11cb96c2eaf83</citedby><cites>FETCH-LOGICAL-c373t-e819e5f9763e3cbad1c58c1067b2b3d6813f064c485a0e0b894b11cb96c2eaf83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2009.01.078$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21815497$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dwilinski, R.</creatorcontrib><creatorcontrib>Doradzinski, R.</creatorcontrib><creatorcontrib>Garczynski, J.</creatorcontrib><creatorcontrib>Sierzputowski, L.P.</creatorcontrib><creatorcontrib>Zajac, M.</creatorcontrib><creatorcontrib>Rudzinski, M.</creatorcontrib><title>Homoepitaxy on bulk ammonothermal GaN</title><title>Journal of crystal growth</title><description>In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very intensive, perfectly resolved excitonic structure in range of band-edge emission of gallium nitride. This structure consists of both lines related to free excitons emission and very narrow lines (full-width at half-maximum (FWHM) value of the order of 0.3
meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers.</description><subject>A1. Homoepitaxy</subject><subject>A1. Optical properties</subject><subject>A2. Ammonothermal crystal growth</subject><subject>A3. Metalorganic chemical vapor deposition</subject><subject>B1. Gallium nitride</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkLFOwzAQhi0EEqXwCihL2RLOduLYG6iCFqmCBWbLcS7gksTFThF9e4JaWFnulu-_X_cRckkho0DF9Tpb27CLr8FnDEBlQDMo5RGZUFnytABgx2QyTpYCy-UpOYtxDTAmKUzIbOk7jxs3mK9d4vuk2rbviek63_vhDUNn2mRhHs_JSWPaiBeHPSUv93fP82W6elo8zG9XqeUlH1KUVGHRqFJw5LYyNbWFtBREWbGK10JS3oDIbS4LAwiVVHlFqa2UsAxNI_mUXO3vboL_2GIcdOeixbY1Pfpt1DzPFROFGkGxB23wMQZs9Ca4zoSdpqB_rOi1_rWif6xooHq0MgZnhwYTrWmbYHrr4l-aUUmLXJUjd7PncHz302HQ0TrsLdYuoB107d1_Vd-MJ3r5</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Dwilinski, R.</creator><creator>Doradzinski, R.</creator><creator>Garczynski, J.</creator><creator>Sierzputowski, L.P.</creator><creator>Zajac, M.</creator><creator>Rudzinski, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090501</creationdate><title>Homoepitaxy on bulk ammonothermal GaN</title><author>Dwilinski, R. ; Doradzinski, R. ; Garczynski, J. ; Sierzputowski, L.P. ; Zajac, M. ; Rudzinski, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-e819e5f9763e3cbad1c58c1067b2b3d6813f064c485a0e0b894b11cb96c2eaf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Homoepitaxy</topic><topic>A1. Optical properties</topic><topic>A2. Ammonothermal crystal growth</topic><topic>A3. Metalorganic chemical vapor deposition</topic><topic>B1. Gallium nitride</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dwilinski, R.</creatorcontrib><creatorcontrib>Doradzinski, R.</creatorcontrib><creatorcontrib>Garczynski, J.</creatorcontrib><creatorcontrib>Sierzputowski, L.P.</creatorcontrib><creatorcontrib>Zajac, M.</creatorcontrib><creatorcontrib>Rudzinski, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dwilinski, R.</au><au>Doradzinski, R.</au><au>Garczynski, J.</au><au>Sierzputowski, L.P.</au><au>Zajac, M.</au><au>Rudzinski, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Homoepitaxy on bulk ammonothermal GaN</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-05-01</date><risdate>2009</risdate><volume>311</volume><issue>10</issue><spage>3058</spage><epage>3062</epage><pages>3058-3062</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very intensive, perfectly resolved excitonic structure in range of band-edge emission of gallium nitride. This structure consists of both lines related to free excitons emission and very narrow lines (full-width at half-maximum (FWHM) value of the order of 0.3
meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2009.01.078</doi><tpages>5</tpages></addata></record> |
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| subjects | A1. Homoepitaxy A1. Optical properties A2. Ammonothermal crystal growth A3. Metalorganic chemical vapor deposition B1. Gallium nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics |
| title | Homoepitaxy on bulk ammonothermal GaN |
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