Micromachined thin film plate acoustic resonators utilizing the lowest order symmetric lamb wave mode
Thin film integrated circuits compatible resonant structures using the lowest order symmetric Lamb wave propagating in thin aluminum nitride (AlN) film membranes have been studied. The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetr...
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| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2007-01, Vol.54 (1), p.87-95 |
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| creator | Yantchev, V. Katardjiev, I. |
| description | Thin film integrated circuits compatible resonant structures using the lowest order symmetric Lamb wave propagating in thin aluminum nitride (AlN) film membranes have been studied. The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rocking curve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-mum wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateral field excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technology proved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology |
| doi_str_mv | 10.1109/TUFFC.2007.214 |
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The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rocking curve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-mum wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateral field excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technology proved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology</description><identifier>ISSN: 0885-3010</identifier><identifier>ISSN: 1525-8955</identifier><identifier>EISSN: 1525-8955</identifier><identifier>DOI: 10.1109/TUFFC.2007.214</identifier><identifier>PMID: 17225803</identifier><identifier>CODEN: ITUCER</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic transducers ; Acoustic waves ; Acoustics ; Acoustics - instrumentation ; Aluminum nitride ; Biomembranes ; Computer-Aided Design ; Deposition ; Equipment Design ; Equipment Failure Analysis ; Exact sciences and technology ; Excitation ; Frequency ; Fundamental areas of phenomenology (including applications) ; General equipment and techniques ; Gratings ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Lamb waves ; Manufactured Materials ; Membranes, Artificial ; Microelectrodes ; Microwave ; Miniaturization - methods ; Motion pictures ; Physics ; Piezoelectric films ; Resonators ; Silicon ; Sputtering ; TECHNOLOGY ; TEKNIKVETENSKAP ; Thin film circuits ; Thin films ; Transducers ; Transistors ; Ultrasonics, quantum acoustics, and physical effects of sound ; Vibration</subject><ispartof>IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2007-01, Vol.54 (1), p.87-95</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rocking curve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-mum wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateral field excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technology proved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology</description><subject>Acoustic transducers</subject><subject>Acoustic waves</subject><subject>Acoustics</subject><subject>Acoustics - instrumentation</subject><subject>Aluminum nitride</subject><subject>Biomembranes</subject><subject>Computer-Aided Design</subject><subject>Deposition</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Exact sciences and technology</subject><subject>Excitation</subject><subject>Frequency</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>General equipment and techniques</subject><subject>Gratings</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Lamb waves</subject><subject>Manufactured Materials</subject><subject>Membranes, Artificial</subject><subject>Microelectrodes</subject><subject>Microwave</subject><subject>Miniaturization - methods</subject><subject>Motion pictures</subject><subject>Physics</subject><subject>Piezoelectric films</subject><subject>Resonators</subject><subject>Silicon</subject><subject>Sputtering</subject><subject>TECHNOLOGY</subject><subject>TEKNIKVETENSKAP</subject><subject>Thin film circuits</subject><subject>Thin films</subject><subject>Transducers</subject><subject>Transistors</subject><subject>Ultrasonics, quantum acoustics, and physical effects of sound</subject><subject>Vibration</subject><issn>0885-3010</issn><issn>1525-8955</issn><issn>1525-8955</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>EIF</sourceid><recordid>eNqF0c9rFDEUB_BBFLtWr14ECYJ6kFlffk5yLKurQsVL6zVksm9qysxkTWZc6l9vtru04EFPIeSTL7z3rarnFJaUgnl_cbler5YMoFkyKh5UCyqZrLWR8mG1AK1lzYHCSfUk52sAKoRhj6sT2jAmNfBFhV-DT3Fw_kcYcUOmcpAu9APZ9m5C4nyc8xQ8SZjj6KaYMpmn0IffYbwqGkkfd5gnEtMGE8k3w4BTKr53Q0t27heSIW7wafWoc33GZ8fztLpcf7xYfa7Pv336sjo7r73kcqqlBwPYCE25aBthnJSedai47kQHTCFz5S6F6JQRkvsWkYPBxmsqvHean1bvDrl5h9u5tdsUBpdubHTBfgjfz2xMV3aerW44haLfHvQ2xZ9zmcIOIXvsezdiGdtqDUoqo0yRb_4plTaMGfg_5KUA2twmvvoLXsc5jWU5VivBGmYUL2h5QKWinBN2dwNRsPv67W39dl-_LfWXDy-PqXM74OaeH_su4PURuOxd3yU3-pDvneZagdqv5sXBBUS8exbAG15S_gCb9sDJ</recordid><startdate>200701</startdate><enddate>200701</enddate><creator>Yantchev, V.</creator><creator>Katardjiev, I.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><scope>7QF</scope><scope>JG9</scope><scope>7X8</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>DF2</scope></search><sort><creationdate>200701</creationdate><title>Micromachined thin film plate acoustic resonators utilizing the lowest order symmetric lamb wave mode</title><author>Yantchev, V. ; Katardjiev, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c535t-5c090e748134b749a55c2fe638f4f026e2ac2f544f69453cbee309e7c814cca83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Acoustic transducers</topic><topic>Acoustic waves</topic><topic>Acoustics</topic><topic>Acoustics - instrumentation</topic><topic>Aluminum nitride</topic><topic>Biomembranes</topic><topic>Computer-Aided Design</topic><topic>Deposition</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Exact sciences and technology</topic><topic>Excitation</topic><topic>Frequency</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>General equipment and techniques</topic><topic>Gratings</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Lamb waves</topic><topic>Manufactured Materials</topic><topic>Membranes, Artificial</topic><topic>Microelectrodes</topic><topic>Microwave</topic><topic>Miniaturization - methods</topic><topic>Motion pictures</topic><topic>Physics</topic><topic>Piezoelectric films</topic><topic>Resonators</topic><topic>Silicon</topic><topic>Sputtering</topic><topic>TECHNOLOGY</topic><topic>TEKNIKVETENSKAP</topic><topic>Thin film circuits</topic><topic>Thin films</topic><topic>Transducers</topic><topic>Transistors</topic><topic>Ultrasonics, quantum acoustics, and physical effects of sound</topic><topic>Vibration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yantchev, V.</creatorcontrib><creatorcontrib>Katardjiev, I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Uppsala universitet</collection><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yantchev, V.</au><au>Katardjiev, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Micromachined thin film plate acoustic resonators utilizing the lowest order symmetric lamb wave mode</atitle><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle><stitle>T-UFFC</stitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><date>2007-01</date><risdate>2007</risdate><volume>54</volume><issue>1</issue><spage>87</spage><epage>95</epage><pages>87-95</pages><issn>0885-3010</issn><issn>1525-8955</issn><eissn>1525-8955</eissn><coden>ITUCER</coden><abstract>Thin film integrated circuits compatible resonant structures using the lowest order symmetric Lamb wave propagating in thin aluminum nitride (AlN) film membranes have been studied. The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rocking curve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-mum wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateral field excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technology proved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology</abstract><cop>New York, NY</cop><pub>IEEE</pub><pmid>17225803</pmid><doi>10.1109/TUFFC.2007.214</doi><tpages>9</tpages></addata></record> |
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| subjects | Acoustic transducers Acoustic waves Acoustics Acoustics - instrumentation Aluminum nitride Biomembranes Computer-Aided Design Deposition Equipment Design Equipment Failure Analysis Exact sciences and technology Excitation Frequency Fundamental areas of phenomenology (including applications) General equipment and techniques Gratings Instruments, apparatus, components and techniques common to several branches of physics and astronomy Lamb waves Manufactured Materials Membranes, Artificial Microelectrodes Microwave Miniaturization - methods Motion pictures Physics Piezoelectric films Resonators Silicon Sputtering TECHNOLOGY TEKNIKVETENSKAP Thin film circuits Thin films Transducers Transistors Ultrasonics, quantum acoustics, and physical effects of sound Vibration |
| title | Micromachined thin film plate acoustic resonators utilizing the lowest order symmetric lamb wave mode |
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