Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
Two linear low-loss varactor configurations for tunable RF applications are compared. The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spacing varactor stack offers the highest linearity for...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2009-01, Vol.57 (1), p.205-215 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Huang, C. Buisman, K. Marchetti, M. Nanver, L.K. Sarubbi, F. Popadic, M. Scholtes, T. Schellevis, H. Larson, L.E. de Vreede, L. |
| description | Two linear low-loss varactor configurations for tunable RF applications are compared. The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spacing varactor stack offers the highest linearity for in-band-modulated signals, and is better suited to adaptive transmitters. Both structures make use of a varactor with an exponential C ( VR ) relation, and so the different requirements of transmit and receive chains can be addressed in one technology. Both configurations have been realized in a silicon-on-glass technology. The measured Q at 1.95 GHz is from ~ 40 to 200 over a capacitance tuning range of 3.5 with the maximum control voltage of 12 V. The measured OIP3 of both structures are roughly 60 dBm. |
| doi_str_mv | 10.1109/TMTT.2008.2008978 |
| format | Article |
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The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spacing varactor stack offers the highest linearity for in-band-modulated signals, and is better suited to adaptive transmitters. Both structures make use of a varactor with an exponential C ( VR ) relation, and so the different requirements of transmit and receive chains can be addressed in one technology. Both configurations have been realized in a silicon-on-glass technology. The measured Q at 1.95 GHz is from ~ 40 to 200 over a capacitance tuning range of 3.5 with the maximum control voltage of 12 V. The measured OIP3 of both structures are roughly 60 dBm.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2008.2008978</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Adaptive systems ; Applied sciences ; band switching ; Capacitance measurement ; Circuit properties ; Diodes ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency filters ; impedance matching ; Jammers ; Jamming ; Linearity ; low distortion ; Microwaves ; Q measurement ; Radio frequencies ; Radio frequency ; Radiocommunications ; Stacks ; Telecommunications ; Telecommunications and information theory ; Transmitters ; Transmitters. Receivers ; tunable filters ; tuners ; Tuning ; Varactors ; Virtual reality ; Voltage</subject><ispartof>IEEE transactions on microwave theory and techniques, 2009-01, Vol.57 (1), p.205-215</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-1d1be069d2e301709ded16016939523498f82cf210ce7432aa4bfa9d20428b2d3</citedby><cites>FETCH-LOGICAL-c385t-1d1be069d2e301709ded16016939523498f82cf210ce7432aa4bfa9d20428b2d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4711066$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,4024,27923,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4711066$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21021331$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Buisman, K.</creatorcontrib><creatorcontrib>Marchetti, M.</creatorcontrib><creatorcontrib>Nanver, L.K.</creatorcontrib><creatorcontrib>Sarubbi, F.</creatorcontrib><creatorcontrib>Popadic, M.</creatorcontrib><creatorcontrib>Scholtes, T.</creatorcontrib><creatorcontrib>Schellevis, H.</creatorcontrib><creatorcontrib>Larson, L.E.</creatorcontrib><creatorcontrib>de Vreede, L.</creatorcontrib><title>Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>Two linear low-loss varactor configurations for tunable RF applications are compared. The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spacing varactor stack offers the highest linearity for in-band-modulated signals, and is better suited to adaptive transmitters. Both structures make use of a varactor with an exponential C ( VR ) relation, and so the different requirements of transmit and receive chains can be addressed in one technology. Both configurations have been realized in a silicon-on-glass technology. The measured Q at 1.95 GHz is from ~ 40 to 200 over a capacitance tuning range of 3.5 with the maximum control voltage of 12 V. The measured OIP3 of both structures are roughly 60 dBm.</description><subject>Adaptive systems</subject><subject>Applied sciences</subject><subject>band switching</subject><subject>Capacitance measurement</subject><subject>Circuit properties</subject><subject>Diodes</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency filters</subject><subject>impedance matching</subject><subject>Jammers</subject><subject>Jamming</subject><subject>Linearity</subject><subject>low distortion</subject><subject>Microwaves</subject><subject>Q measurement</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>Radiocommunications</subject><subject>Stacks</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Transmitters</subject><subject>Transmitters. Receivers</subject><subject>tunable filters</subject><subject>tuners</subject><subject>Tuning</subject><subject>Varactors</subject><subject>Virtual reality</subject><subject>Voltage</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU9Lw0AQxRdRsFY_gHgJgnqKzv5Jsnss1aoYETT1umyTjWxJs3U3Ufrt3drSgwcvMwzzmwdvHkKnGK4xBnFTPBfFNQHgv0VkfA8NcJJksUgz2EcDAMxjwTgcoiPv52FkCfABepo2nVNRblqtXJTb7zi33kfvyqmysy66NbbS0di2tfnoneqMbX1Uh8WoUsvOfOnodRK9rXynF_4YHdSq8fpk24doOrkrxg9x_nL_OB7lcUl50sW4wjMNqaiIpoAzEJWucAo4FVQkhDLBa07KmmAodcYoUYrNahVwYITPSEWH6Gqju3T2s9e-kwvjS900qtW295KngjNKBQ_k5b8kZUwApyyA53_Aue1dG1xInqSCEEZFgPAGKl34kdO1XDqzUG4lMch1CnKdglwHILcphJuLrbDypWpqp9rS-N1hMEkwpThwZxvOaK13a5YF2TSlP4ZqjgU</recordid><startdate>200901</startdate><enddate>200901</enddate><creator>Huang, C.</creator><creator>Buisman, K.</creator><creator>Marchetti, M.</creator><creator>Nanver, L.K.</creator><creator>Sarubbi, F.</creator><creator>Popadic, M.</creator><creator>Scholtes, T.</creator><creator>Schellevis, H.</creator><creator>Larson, L.E.</creator><creator>de Vreede, L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Receivers</topic><topic>tunable filters</topic><topic>tuners</topic><topic>Tuning</topic><topic>Varactors</topic><topic>Virtual reality</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Buisman, K.</creatorcontrib><creatorcontrib>Marchetti, M.</creatorcontrib><creatorcontrib>Nanver, L.K.</creatorcontrib><creatorcontrib>Sarubbi, F.</creatorcontrib><creatorcontrib>Popadic, M.</creatorcontrib><creatorcontrib>Scholtes, T.</creatorcontrib><creatorcontrib>Schellevis, H.</creatorcontrib><creatorcontrib>Larson, L.E.</creatorcontrib><creatorcontrib>de Vreede, L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, C.</au><au>Buisman, K.</au><au>Marchetti, M.</au><au>Nanver, L.K.</au><au>Sarubbi, F.</au><au>Popadic, M.</au><au>Scholtes, T.</au><au>Schellevis, H.</au><au>Larson, L.E.</au><au>de Vreede, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2009-01</date><risdate>2009</risdate><volume>57</volume><issue>1</issue><spage>205</spage><epage>215</epage><pages>205-215</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Two linear low-loss varactor configurations for tunable RF applications are compared. The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spacing varactor stack offers the highest linearity for in-band-modulated signals, and is better suited to adaptive transmitters. Both structures make use of a varactor with an exponential C ( VR ) relation, and so the different requirements of transmit and receive chains can be addressed in one technology. Both configurations have been realized in a silicon-on-glass technology. The measured Q at 1.95 GHz is from ~ 40 to 200 over a capacitance tuning range of 3.5 with the maximum control voltage of 12 V. The measured OIP3 of both structures are roughly 60 dBm.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2008.2008978</doi><tpages>11</tpages></addata></record> |
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| subjects | Adaptive systems Applied sciences band switching Capacitance measurement Circuit properties Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency filters impedance matching Jammers Jamming Linearity low distortion Microwaves Q measurement Radio frequencies Radio frequency Radiocommunications Stacks Telecommunications Telecommunications and information theory Transmitters Transmitters. Receivers tunable filters tuners Tuning Varactors Virtual reality Voltage |
| title | Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems |
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