Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes
We have demonstrated the fabrication and characterization of hybrid CdSe-ZnS quantum dot (QD)-InGaN-GaN quantum well (QW) red light-emitting diodes (LED). The red-emitting QD-resin blend was dropped on the InGaN blue LED to complete the device fabrication. With proper blend ratio, the blue light fro...
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| Veröffentlicht in: | IEEE electron device letters 2008-07, Vol.29 (7), p.711-713 |
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| creator | HUANG, Chun-Yuan SU, Yan-Kuin CHEN, Ying-Chih TSAI, Ping-Chieh WAN, Cheng-Tien LI, Wen-Liang |
| description | We have demonstrated the fabrication and characterization of hybrid CdSe-ZnS quantum dot (QD)-InGaN-GaN quantum well (QW) red light-emitting diodes (LED). The red-emitting QD-resin blend was dropped on the InGaN blue LED to complete the device fabrication. With proper blend ratio, the blue light from the InGaN QWs can be effectively down converted to the red light. In our case, when the QD concentration is as high as 40 mg/1 ml of resin, the luminous flux from the hybrid LED biased at 20 mA is 0.65 lm, from which the luminous efficiency of 9.3 lm/W can be obtained. Also, the corresponding electroluminescence spectrum exhibits the contribution of red light emission to the total light intensity is 98%, while the Commission Internationale de l'Eclairage chromaticity coordinates of the red light are (0.635, 0.275). However, the coordinates would be gradually shifted with current increasing from 10 to 60 mA due to the fluctuation of red/blue light ratio and thermal effect. |
| doi_str_mv | 10.1109/LED.2008.2000615 |
| format | Article |
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The red-emitting QD-resin blend was dropped on the InGaN blue LED to complete the device fabrication. With proper blend ratio, the blue light from the InGaN QWs can be effectively down converted to the red light. In our case, when the QD concentration is as high as 40 mg/1 ml of resin, the luminous flux from the hybrid LED biased at 20 mA is 0.65 lm, from which the luminous efficiency of 9.3 lm/W can be obtained. Also, the corresponding electroluminescence spectrum exhibits the contribution of red light emission to the total light intensity is 98%, while the Commission Internationale de l'Eclairage chromaticity coordinates of the red light are (0.635, 0.275). However, the coordinates would be gradually shifted with current increasing from 10 to 60 mA due to the fluctuation of red/blue light ratio and thermal effect.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2000615</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Biosensors ; Blends ; Compound structure devices ; Devices ; Diodes ; Electroluminescence ; Electronics ; Epoxy resins ; Exact sciences and technology ; Fabrication ; Flux ; Indium gallium nitrides ; Light emission ; Light emitting diodes ; Light-emitting diodes (LEDs) ; Nanocrystals ; Optoelectronic devices ; Phosphors ; Quantum dots ; quantum dots (QDs) ; Quantum wells ; quantum wells (QWs) ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE electron device letters, 2008-07, Vol.29 (7), p.711-713</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-886a82a7b2a2652b7a0ca5bdb09b2870f13be30e3d2f41ebb050b80eb808554c3</citedby><cites>FETCH-LOGICAL-c416t-886a82a7b2a2652b7a0ca5bdb09b2870f13be30e3d2f41ebb050b80eb808554c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4558089$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4558089$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20474661$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HUANG, Chun-Yuan</creatorcontrib><creatorcontrib>SU, Yan-Kuin</creatorcontrib><creatorcontrib>CHEN, Ying-Chih</creatorcontrib><creatorcontrib>TSAI, Ping-Chieh</creatorcontrib><creatorcontrib>WAN, Cheng-Tien</creatorcontrib><creatorcontrib>LI, Wen-Liang</creatorcontrib><title>Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We have demonstrated the fabrication and characterization of hybrid CdSe-ZnS quantum dot (QD)-InGaN-GaN quantum well (QW) red light-emitting diodes (LED). The red-emitting QD-resin blend was dropped on the InGaN blue LED to complete the device fabrication. With proper blend ratio, the blue light from the InGaN QWs can be effectively down converted to the red light. In our case, when the QD concentration is as high as 40 mg/1 ml of resin, the luminous flux from the hybrid LED biased at 20 mA is 0.65 lm, from which the luminous efficiency of 9.3 lm/W can be obtained. Also, the corresponding electroluminescence spectrum exhibits the contribution of red light emission to the total light intensity is 98%, while the Commission Internationale de l'Eclairage chromaticity coordinates of the red light are (0.635, 0.275). However, the coordinates would be gradually shifted with current increasing from 10 to 60 mA due to the fluctuation of red/blue light ratio and thermal effect.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Biosensors</subject><subject>Blends</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electroluminescence</subject><subject>Electronics</subject><subject>Epoxy resins</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Flux</subject><subject>Indium gallium nitrides</subject><subject>Light emission</subject><subject>Light emitting diodes</subject><subject>Light-emitting diodes (LEDs)</subject><subject>Nanocrystals</subject><subject>Optoelectronic devices</subject><subject>Phosphors</subject><subject>Quantum dots</subject><subject>quantum dots (QDs)</subject><subject>Quantum wells</subject><subject>quantum wells (QWs)</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUtLAzEURoMoWB97wc0g-Nik3rwmmaW09QGDolUENyGZydSUdkYnMwv_vSktXbhwcRNIzv24yUHohMCQEMiu88l4SAHUaoGUiB00IEIoDCJlu2gAkhPMCKT76CCEOQDhXPIByu9_bOvLZFROHf6op8lzb-quXybjpsMP9Z15xLG2p-9usUheXJnkfvbZ4cnSd52vZ8nYN6ULR2ivMovgjjf7IXq7nbyO7nH-dPcwuslxwUnaYaVSo6iRlhqaCmqlgcIIW1rILFUSKsKsY-BYSStOnLUgwCpwsZQQvGCH6HKd-9U2370LnV76UMTRTO2aPmglBUgKNIvkxb8ki7-QRS6CV_-CRAomiGQgI3r2B503fVvHB-uMUCol8FUerKGibUJoXaW_Wr807Y8moFfCdBSmV8L0RlhsOd_kmlCYRdWauvBh20chCktTErnTNeedc9trHmWDytgvRD2aRg</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>HUANG, Chun-Yuan</creator><creator>SU, Yan-Kuin</creator><creator>CHEN, Ying-Chih</creator><creator>TSAI, Ping-Chieh</creator><creator>WAN, Cheng-Tien</creator><creator>LI, Wen-Liang</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20080701</creationdate><title>Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes</title><author>HUANG, Chun-Yuan ; SU, Yan-Kuin ; CHEN, Ying-Chih ; TSAI, Ping-Chieh ; WAN, Cheng-Tien ; LI, Wen-Liang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c416t-886a82a7b2a2652b7a0ca5bdb09b2870f13be30e3d2f41ebb050b80eb808554c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Biosensors</topic><topic>Blends</topic><topic>Compound structure devices</topic><topic>Devices</topic><topic>Diodes</topic><topic>Electroluminescence</topic><topic>Electronics</topic><topic>Epoxy resins</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Flux</topic><topic>Indium gallium nitrides</topic><topic>Light emission</topic><topic>Light emitting diodes</topic><topic>Light-emitting diodes (LEDs)</topic><topic>Nanocrystals</topic><topic>Optoelectronic devices</topic><topic>Phosphors</topic><topic>Quantum dots</topic><topic>quantum dots (QDs)</topic><topic>Quantum wells</topic><topic>quantum wells (QWs)</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HUANG, Chun-Yuan</creatorcontrib><creatorcontrib>SU, Yan-Kuin</creatorcontrib><creatorcontrib>CHEN, Ying-Chih</creatorcontrib><creatorcontrib>TSAI, Ping-Chieh</creatorcontrib><creatorcontrib>WAN, Cheng-Tien</creatorcontrib><creatorcontrib>LI, Wen-Liang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG, Chun-Yuan</au><au>SU, Yan-Kuin</au><au>CHEN, Ying-Chih</au><au>TSAI, Ping-Chieh</au><au>WAN, Cheng-Tien</au><au>LI, Wen-Liang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-07-01</date><risdate>2008</risdate><volume>29</volume><issue>7</issue><spage>711</spage><epage>713</epage><pages>711-713</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We have demonstrated the fabrication and characterization of hybrid CdSe-ZnS quantum dot (QD)-InGaN-GaN quantum well (QW) red light-emitting diodes (LED). The red-emitting QD-resin blend was dropped on the InGaN blue LED to complete the device fabrication. With proper blend ratio, the blue light from the InGaN QWs can be effectively down converted to the red light. In our case, when the QD concentration is as high as 40 mg/1 ml of resin, the luminous flux from the hybrid LED biased at 20 mA is 0.65 lm, from which the luminous efficiency of 9.3 lm/W can be obtained. Also, the corresponding electroluminescence spectrum exhibits the contribution of red light emission to the total light intensity is 98%, while the Commission Internationale de l'Eclairage chromaticity coordinates of the red light are (0.635, 0.275). However, the coordinates would be gradually shifted with current increasing from 10 to 60 mA due to the fluctuation of red/blue light ratio and thermal effect.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.2000615</doi><tpages>3</tpages></addata></record> |
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| subjects | Absorption Applied sciences Biosensors Blends Compound structure devices Devices Diodes Electroluminescence Electronics Epoxy resins Exact sciences and technology Fabrication Flux Indium gallium nitrides Light emission Light emitting diodes Light-emitting diodes (LEDs) Nanocrystals Optoelectronic devices Phosphors Quantum dots quantum dots (QDs) Quantum wells quantum wells (QWs) Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes |
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