Stability and 2-D Simulation Studies of Avalanche Breakdown in 4H-SiC DMOSFETs With JTE

In this paper, the stability of n-channel 4H-silicon carbide (SiC) DMOSFETs with junction termination extension (JTE) was assessed by measuring the breakdown voltage (BV) of these devices before and after bias stress at a high temperature. The BV slumped after the DMOSFET was bias stressed at 1200 V...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-02, Vol.55 (2), p.489-494
Hauptverfasser:	Okayama, T., Arthur, S.D., Rao, R.R., Kishore, K., Rao, M.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Breakdown Breakdown voltage (BV) Charge Computer simulation Current measurement Devices DMOSFET Electronics Exact sciences and technology interface charge JFETs Logic gates Oxides Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Stability Stress Stress measurement Temperature measurement Transistors Trapping
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