12 GHz [F_{rm MAX}] @@iGaN/AlN/AlGaN@ Nanowire MISFET

GaN/AlN/AlGaN/GaN nanowire metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated for the first time with submicrometer gate lengths. Their microwave performances were investigated. An intrinsic current-gain cutoff frequency (@@iF@ @@dT@) of 5 GHz as well as an intrinsic maximum available gain (@@iF@ @@dMAX@) cutoff frequency of 12 GHz have been obtained for the first time and associated with a gate length of 0.5 mum. These results show the great potentiality of GaN-based nanowire FETs for microwave applications.