Avalanche Multiplication in InAlAs
A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p + -i-n + and n + -i-p + diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm -1 . The electron and hole...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-01, Vol.54 (1), p.11-16 |
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| creator | Goh, Y. L. Jones, S. K. Massey, D. J. Marshall, A. R. J. Ng, J. S. Tan, C. H. Ng, W. K. Rees, G. J. Hopkinson, M. David, J. P. R. |
| description | A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p + -i-n + and n + -i-p + diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm -1 . The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mum-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique |
| doi_str_mv | 10.1109/TED.2006.887229 |
| format | Article |
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L. ; Jones, S. K. ; Massey, D. J. ; Marshall, A. R. J. ; Ng, J. S. ; Tan, C. H. ; Ng, W. K. ; Rees, G. J. ; Hopkinson, M. ; David, J. P. R.</creator><creatorcontrib>Goh, Y. L. ; Jones, S. K. ; Massey, D. J. ; Marshall, A. R. J. ; Ng, J. S. ; Tan, C. H. ; Ng, W. K. ; Rees, G. J. ; Hopkinson, M. ; David, J. P. R.</creatorcontrib><description>A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p + -i-n + and n + -i-p + diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm -1 . The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mum-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.887229</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Avalanche diodes ; Avalanche photodiodes (APDs) ; Avalanches ; Breakdown ; Charge carrier processes ; Dark current ; Diodes ; Doping ; Electronics ; Exact sciences and technology ; impact ionization ; Indium compounds ; Ionization ; Ionization coefficients ; Mathematical models ; Multiplication ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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L.</creatorcontrib><creatorcontrib>Jones, S. K.</creatorcontrib><creatorcontrib>Massey, D. J.</creatorcontrib><creatorcontrib>Marshall, A. R. J.</creatorcontrib><creatorcontrib>Ng, J. S.</creatorcontrib><creatorcontrib>Tan, C. H.</creatorcontrib><creatorcontrib>Ng, W. K.</creatorcontrib><creatorcontrib>Rees, G. J.</creatorcontrib><creatorcontrib>Hopkinson, M.</creatorcontrib><creatorcontrib>David, J. P. R.</creatorcontrib><title>Avalanche Multiplication in InAlAs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p + -i-n + and n + -i-p + diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm -1 . The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mum-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique</description><subject>Applied sciences</subject><subject>Avalanche diodes</subject><subject>Avalanche photodiodes (APDs)</subject><subject>Avalanches</subject><subject>Breakdown</subject><subject>Charge carrier processes</subject><subject>Dark current</subject><subject>Diodes</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>impact ionization</subject><subject>Indium compounds</subject><subject>Ionization</subject><subject>Ionization coefficients</subject><subject>Mathematical models</subject><subject>Multiplication</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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K.</creator><creator>Rees, G. J.</creator><creator>Hopkinson, M.</creator><creator>David, J. P. R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200701</creationdate><title>Avalanche Multiplication in InAlAs</title><author>Goh, Y. L. ; Jones, S. K. ; Massey, D. J. ; Marshall, A. R. J. ; Ng, J. S. ; Tan, C. H. ; Ng, W. K. ; Rees, G. J. ; Hopkinson, M. ; David, J. P. 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R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Avalanche Multiplication in InAlAs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-01</date><risdate>2007</risdate><volume>54</volume><issue>1</issue><spage>11</spage><epage>16</epage><pages>11-16</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p + -i-n + and n + -i-p + diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm -1 . The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mum-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.887229</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Avalanche diodes Avalanche photodiodes (APDs) Avalanches Breakdown Charge carrier processes Dark current Diodes Doping Electronics Exact sciences and technology impact ionization Indium compounds Ionization Ionization coefficients Mathematical models Multiplication Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Tunneling |
| title | Avalanche Multiplication in InAlAs |
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