Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

In this paper, we demonstrate a novel method to integrate photonic crystals (PhCs) on GaN-based blue light-emitting diodes (LEDs) using a silicon substrate as a mold for forming the PhCs. This method starts with fabricating a 2D grooved Si substrate as that mold. Subsequently, GaN-based epitaxial la...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 2008-10, Vol.44 (10), p.984-989
Hauptverfasser: Orita, K., Takase, Y., Fukushima, Y., Usuda, M., Ueda, T., Takigawa, S., Tanaka, T., Ueda, D., Egawa, T.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we demonstrate a novel method to integrate photonic crystals (PhCs) on GaN-based blue light-emitting diodes (LEDs) using a silicon substrate as a mold for forming the PhCs. This method starts with fabricating a 2D grooved Si substrate as that mold. Subsequently, GaN-based epitaxial layers are grown on the Si mold-substrate, which effectively reduces the dislocation density in GaN by enhanced lateral epitaxial growth. After the epitaxial layers are bonded onto a highly reflective substrate, the Si mold-substrate is removed. This substrate-transfer technique replicates PhC from the mold-substrate on the LED surface free from processing damages. The resultant LEDs with PhC have outperformed the LEDs without PhC in the optical output power by 80%, taking advantage of the enhanced light extraction by PhC.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2008.2000912