Far-infrared sensor with LPCVD-deposited low-stress Si-rich nitride absorber membrane—Part 1. Optical absorptivity

This is the first part of the two articles reporting investigation of a thermal detector-type far-infrared sensor operating in the 8–14 μm wavelength, using Low-Pressure-Chemical-Vapor-Deposition (LPCVD)-deposited low-stress Si-rich nitride (SiN) membrane as the thermal absorber. Although the use of...

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Veröffentlicht in:	Sensors and actuators. A. Physical. 2009-06, Vol.152 (2), p.119-125
Hauptverfasser:	Jutzi, F., Wicaksono, D.H.B., Pandraud, G., de Rooij, N., French, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Far-infrared sensor LPCVD SiN MEMS Optical absorptivity
Online-Zugang:	Volltext
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