Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/diss...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-01, Vol.55 (1), p.96-130
Hauptverfasser:	Skotnicki, Thomas, Fenouillet-Beranger, Claire, Gallon, Claire, Boeuf, Frederic, Monfray, Stephane, Payet, Fabrice, Pouydebasque, Arnaud, Szczap, Melanie, Farcy, Alexis, Arnaud, Franck, Clerc, Sylvain, Sellier, Manuel, Cathignol, Augustin, Schoellkopf, Jean-Pierre, Perea, Ernesto, Ferrant, Richard, Mingam, Herve
Format:	Artikel
Sprache:	eng
Schlagworte:	32 nm CMOS CMOS integrated circuits CMOS technology Density Devices double gate Drivers emerging technologies FinFET fully depleted silicon-on-insulator (FDSOI) gate dielectric germanium H-K Logic gates low power Manufacturability Materials metallic gate mobile Mobile communication mobility MOSFET multimedia multithreshold voltage nanotechnologies Pictures Power dissipation roadmap Semiconductor devices shallow junction silicon silicon-on-nothing (SON) SRAM static noise margin (SNM) strain technology thin body thin BOX Transistors variability
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