Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia
The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/diss...
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-01, Vol.55 (1), p.96-130 |
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| creator | Skotnicki, Thomas Fenouillet-Beranger, Claire Gallon, Claire Boeuf, Frederic Monfray, Stephane Payet, Fabrice Pouydebasque, Arnaud Szczap, Melanie Farcy, Alexis Arnaud, Franck Clerc, Sylvain Sellier, Manuel Cathignol, Augustin Schoellkopf, Jean-Pierre Perea, Ernesto Ferrant, Richard Mingam, Herve |
| description | The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/dissipation (mobile products!), mix of varied digital and analog/RF functions (system-on-chip integration), etc. Controllability of variations and static leakage will add to, and in certain products prevail, over speed and density. Implications at all levels are multiple and are more diverse than just speed and smallness. The goal of the authors has been to see the problem globally from the product level and to place its components in their true proportions. Therefore, we will start with drawing the product-level picture and placing it in a historical perspective. Next, we will review the state of the art, the requirements, and solutions at the level of materials, transistor, and technology. Detailed analysis and potential solutions for prolonging CMOS as the leading information technology are presented in this paper. |
| doi_str_mv | 10.1109/TED.2007.911338 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_34440444</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4408810</ieee_id><sourcerecordid>875051507</sourcerecordid><originalsourceid>FETCH-LOGICAL-c449t-6dd9276cf65fea49f273f5277e54500253be44de026d7866e99912a18fafc3843</originalsourceid><addsrcrecordid>eNqFkb1PG0EQxVdRkOIANQXNKUVoOLPfH2VkG7BkCyRMvVruZsla51uyezbKf58FoxQUUIxmRvq9Nxo9hE4IHhOCzcVqNh1TjNXYEMKY_oJGRAhVG8nlVzTCmOjaMM2-oe85r8sqOacjtJr3fdy5IeygWroBUnBdPq-msAsNlMH1bTVZ3txVK2h-97GLjwFy5WOqFvG5vo3PkKplfAhdkW-7IWygDe4IHfhiA8dv_RDdX85Wk-t6cXM1n_xa1A3nZqhl2xqqZOOl8OC48VQxL6hSILjAmAr2AJy3gKlslZYSjDGEOqK98w3TnB2is73vU4p_tpAHuwm5ga5zPcRttgYzyajC6lNSK4EFEa_kzw9JxjnHpQr44x24jtvUl3-tlpQbqags0MUealLMOYG3TylsXPprCbYvsdkSm32Jze5jK4rTvSIAwH-63NSaYPYPNDOQpw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862496726</pqid></control><display><type>article</type><title>Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia</title><source>IEEE Electronic Library (IEL)</source><creator>Skotnicki, Thomas ; Fenouillet-Beranger, Claire ; Gallon, Claire ; Boeuf, Frederic ; Monfray, Stephane ; Payet, Fabrice ; Pouydebasque, Arnaud ; Szczap, Melanie ; Farcy, Alexis ; Arnaud, Franck ; Clerc, Sylvain ; Sellier, Manuel ; Cathignol, Augustin ; Schoellkopf, Jean-Pierre ; Perea, Ernesto ; Ferrant, Richard ; Mingam, Herve</creator><creatorcontrib>Skotnicki, Thomas ; Fenouillet-Beranger, Claire ; Gallon, Claire ; Boeuf, Frederic ; Monfray, Stephane ; Payet, Fabrice ; Pouydebasque, Arnaud ; Szczap, Melanie ; Farcy, Alexis ; Arnaud, Franck ; Clerc, Sylvain ; Sellier, Manuel ; Cathignol, Augustin ; Schoellkopf, Jean-Pierre ; Perea, Ernesto ; Ferrant, Richard ; Mingam, Herve</creatorcontrib><description>The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/dissipation (mobile products!), mix of varied digital and analog/RF functions (system-on-chip integration), etc. Controllability of variations and static leakage will add to, and in certain products prevail, over speed and density. Implications at all levels are multiple and are more diverse than just speed and smallness. The goal of the authors has been to see the problem globally from the product level and to place its components in their true proportions. Therefore, we will start with drawing the product-level picture and placing it in a historical perspective. Next, we will review the state of the art, the requirements, and solutions at the level of materials, transistor, and technology. Detailed analysis and potential solutions for prolonging CMOS as the leading information technology are presented in this paper.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.911338</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>32 nm ; CMOS ; CMOS integrated circuits ; CMOS technology ; Density ; Devices ; double gate ; Drivers ; emerging technologies ; FinFET ; fully depleted silicon-on-insulator (FDSOI) ; gate dielectric ; germanium ; H-K ; Logic gates ; low power ; Manufacturability ; Materials ; metallic gate ; mobile ; Mobile communication ; mobility ; MOSFET ; multimedia ; multithreshold voltage ; nanotechnologies ; Pictures ; Power dissipation ; roadmap ; Semiconductor devices ; shallow junction ; silicon ; silicon-on-nothing (SON) ; SRAM ; static noise margin (SNM) ; strain ; technology ; thin body ; thin BOX ; Transistors ; variability</subject><ispartof>IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.96-130</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-6dd9276cf65fea49f273f5277e54500253be44de026d7866e99912a18fafc3843</citedby><cites>FETCH-LOGICAL-c449t-6dd9276cf65fea49f273f5277e54500253be44de026d7866e99912a18fafc3843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4408810$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4408810$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Skotnicki, Thomas</creatorcontrib><creatorcontrib>Fenouillet-Beranger, Claire</creatorcontrib><creatorcontrib>Gallon, Claire</creatorcontrib><creatorcontrib>Boeuf, Frederic</creatorcontrib><creatorcontrib>Monfray, Stephane</creatorcontrib><creatorcontrib>Payet, Fabrice</creatorcontrib><creatorcontrib>Pouydebasque, Arnaud</creatorcontrib><creatorcontrib>Szczap, Melanie</creatorcontrib><creatorcontrib>Farcy, Alexis</creatorcontrib><creatorcontrib>Arnaud, Franck</creatorcontrib><creatorcontrib>Clerc, Sylvain</creatorcontrib><creatorcontrib>Sellier, Manuel</creatorcontrib><creatorcontrib>Cathignol, Augustin</creatorcontrib><creatorcontrib>Schoellkopf, Jean-Pierre</creatorcontrib><creatorcontrib>Perea, Ernesto</creatorcontrib><creatorcontrib>Ferrant, Richard</creatorcontrib><creatorcontrib>Mingam, Herve</creatorcontrib><title>Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/dissipation (mobile products!), mix of varied digital and analog/RF functions (system-on-chip integration), etc. Controllability of variations and static leakage will add to, and in certain products prevail, over speed and density. Implications at all levels are multiple and are more diverse than just speed and smallness. The goal of the authors has been to see the problem globally from the product level and to place its components in their true proportions. Therefore, we will start with drawing the product-level picture and placing it in a historical perspective. Next, we will review the state of the art, the requirements, and solutions at the level of materials, transistor, and technology. Detailed analysis and potential solutions for prolonging CMOS as the leading information technology are presented in this paper.</description><subject>32 nm</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Density</subject><subject>Devices</subject><subject>double gate</subject><subject>Drivers</subject><subject>emerging technologies</subject><subject>FinFET</subject><subject>fully depleted silicon-on-insulator (FDSOI)</subject><subject>gate dielectric</subject><subject>germanium</subject><subject>H-K</subject><subject>Logic gates</subject><subject>low power</subject><subject>Manufacturability</subject><subject>Materials</subject><subject>metallic gate</subject><subject>mobile</subject><subject>Mobile communication</subject><subject>mobility</subject><subject>MOSFET</subject><subject>multimedia</subject><subject>multithreshold voltage</subject><subject>nanotechnologies</subject><subject>Pictures</subject><subject>Power dissipation</subject><subject>roadmap</subject><subject>Semiconductor devices</subject><subject>shallow junction</subject><subject>silicon</subject><subject>silicon-on-nothing (SON)</subject><subject>SRAM</subject><subject>static noise margin (SNM)</subject><subject>strain</subject><subject>technology</subject><subject>thin body</subject><subject>thin BOX</subject><subject>Transistors</subject><subject>variability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkb1PG0EQxVdRkOIANQXNKUVoOLPfH2VkG7BkCyRMvVruZsla51uyezbKf58FoxQUUIxmRvq9Nxo9hE4IHhOCzcVqNh1TjNXYEMKY_oJGRAhVG8nlVzTCmOjaMM2-oe85r8sqOacjtJr3fdy5IeygWroBUnBdPq-msAsNlMH1bTVZ3txVK2h-97GLjwFy5WOqFvG5vo3PkKplfAhdkW-7IWygDe4IHfhiA8dv_RDdX85Wk-t6cXM1n_xa1A3nZqhl2xqqZOOl8OC48VQxL6hSILjAmAr2AJy3gKlslZYSjDGEOqK98w3TnB2is73vU4p_tpAHuwm5ga5zPcRttgYzyajC6lNSK4EFEa_kzw9JxjnHpQr44x24jtvUl3-tlpQbqags0MUealLMOYG3TylsXPprCbYvsdkSm32Jze5jK4rTvSIAwH-63NSaYPYPNDOQpw</recordid><startdate>200801</startdate><enddate>200801</enddate><creator>Skotnicki, Thomas</creator><creator>Fenouillet-Beranger, Claire</creator><creator>Gallon, Claire</creator><creator>Boeuf, Frederic</creator><creator>Monfray, Stephane</creator><creator>Payet, Fabrice</creator><creator>Pouydebasque, Arnaud</creator><creator>Szczap, Melanie</creator><creator>Farcy, Alexis</creator><creator>Arnaud, Franck</creator><creator>Clerc, Sylvain</creator><creator>Sellier, Manuel</creator><creator>Cathignol, Augustin</creator><creator>Schoellkopf, Jean-Pierre</creator><creator>Perea, Ernesto</creator><creator>Ferrant, Richard</creator><creator>Mingam, Herve</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200801</creationdate><title>Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia</title><author>Skotnicki, Thomas ; Fenouillet-Beranger, Claire ; Gallon, Claire ; Boeuf, Frederic ; Monfray, Stephane ; Payet, Fabrice ; Pouydebasque, Arnaud ; Szczap, Melanie ; Farcy, Alexis ; Arnaud, Franck ; Clerc, Sylvain ; Sellier, Manuel ; Cathignol, Augustin ; Schoellkopf, Jean-Pierre ; Perea, Ernesto ; Ferrant, Richard ; Mingam, Herve</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-6dd9276cf65fea49f273f5277e54500253be44de026d7866e99912a18fafc3843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>32 nm</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Density</topic><topic>Devices</topic><topic>double gate</topic><topic>Drivers</topic><topic>emerging technologies</topic><topic>FinFET</topic><topic>fully depleted silicon-on-insulator (FDSOI)</topic><topic>gate dielectric</topic><topic>germanium</topic><topic>H-K</topic><topic>Logic gates</topic><topic>low power</topic><topic>Manufacturability</topic><topic>Materials</topic><topic>metallic gate</topic><topic>mobile</topic><topic>Mobile communication</topic><topic>mobility</topic><topic>MOSFET</topic><topic>multimedia</topic><topic>multithreshold voltage</topic><topic>nanotechnologies</topic><topic>Pictures</topic><topic>Power dissipation</topic><topic>roadmap</topic><topic>Semiconductor devices</topic><topic>shallow junction</topic><topic>silicon</topic><topic>silicon-on-nothing (SON)</topic><topic>SRAM</topic><topic>static noise margin (SNM)</topic><topic>strain</topic><topic>technology</topic><topic>thin body</topic><topic>thin BOX</topic><topic>Transistors</topic><topic>variability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Skotnicki, Thomas</creatorcontrib><creatorcontrib>Fenouillet-Beranger, Claire</creatorcontrib><creatorcontrib>Gallon, Claire</creatorcontrib><creatorcontrib>Boeuf, Frederic</creatorcontrib><creatorcontrib>Monfray, Stephane</creatorcontrib><creatorcontrib>Payet, Fabrice</creatorcontrib><creatorcontrib>Pouydebasque, Arnaud</creatorcontrib><creatorcontrib>Szczap, Melanie</creatorcontrib><creatorcontrib>Farcy, Alexis</creatorcontrib><creatorcontrib>Arnaud, Franck</creatorcontrib><creatorcontrib>Clerc, Sylvain</creatorcontrib><creatorcontrib>Sellier, Manuel</creatorcontrib><creatorcontrib>Cathignol, Augustin</creatorcontrib><creatorcontrib>Schoellkopf, Jean-Pierre</creatorcontrib><creatorcontrib>Perea, Ernesto</creatorcontrib><creatorcontrib>Ferrant, Richard</creatorcontrib><creatorcontrib>Mingam, Herve</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Skotnicki, Thomas</au><au>Fenouillet-Beranger, Claire</au><au>Gallon, Claire</au><au>Boeuf, Frederic</au><au>Monfray, Stephane</au><au>Payet, Fabrice</au><au>Pouydebasque, Arnaud</au><au>Szczap, Melanie</au><au>Farcy, Alexis</au><au>Arnaud, Franck</au><au>Clerc, Sylvain</au><au>Sellier, Manuel</au><au>Cathignol, Augustin</au><au>Schoellkopf, Jean-Pierre</au><au>Perea, Ernesto</au><au>Ferrant, Richard</au><au>Mingam, Herve</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2008-01</date><risdate>2008</risdate><volume>55</volume><issue>1</issue><spage>96</spage><epage>130</epage><pages>96-130</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/dissipation (mobile products!), mix of varied digital and analog/RF functions (system-on-chip integration), etc. Controllability of variations and static leakage will add to, and in certain products prevail, over speed and density. Implications at all levels are multiple and are more diverse than just speed and smallness. The goal of the authors has been to see the problem globally from the product level and to place its components in their true proportions. Therefore, we will start with drawing the product-level picture and placing it in a historical perspective. Next, we will review the state of the art, the requirements, and solutions at the level of materials, transistor, and technology. Detailed analysis and potential solutions for prolonging CMOS as the leading information technology are presented in this paper.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2007.911338</doi><tpages>35</tpages></addata></record> |
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| subjects | 32 nm CMOS CMOS integrated circuits CMOS technology Density Devices double gate Drivers emerging technologies FinFET fully depleted silicon-on-insulator (FDSOI) gate dielectric germanium H-K Logic gates low power Manufacturability Materials metallic gate mobile Mobile communication mobility MOSFET multimedia multithreshold voltage nanotechnologies Pictures Power dissipation roadmap Semiconductor devices shallow junction silicon silicon-on-nothing (SON) SRAM static noise margin (SNM) strain technology thin body thin BOX Transistors variability |
| title | Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T09%3A48%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Innovative%20Materials,%20Devices,%20and%20CMOS%20Technologies%20for%20Low-Power%20Mobile%20Multimedia&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Skotnicki,%20Thomas&rft.date=2008-01&rft.volume=55&rft.issue=1&rft.spage=96&rft.epage=130&rft.pages=96-130&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2007.911338&rft_dat=%3Cproquest_RIE%3E875051507%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862496726&rft_id=info:pmid/&rft_ieee_id=4408810&rfr_iscdi=true |