Feasibility Study of 45-nm-Node Scaled-Down Cu Interconnects With Molecular-Pore-Stacking (MPS) SiOCH Films

A feasibility study was done for 45-nm-node Cu interconnects using a novel molecular-pore-stacking (MPS) SiOCH film (k = 2.45), taking electron scattering in the scaled-down Cu lines into consideration. The as-deposited MPS SiOCH film, formed by plasma polymerization of a robust six-member-ring (hex...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-04, Vol.54 (4), p.797-806
Hauptverfasser:	Tada, Munehiro, Ohtake, Hiroto, Ito, Fuminori, Narihiro, Mitsuru, Taiji, Toshiji, Kasama, Yoshiko, Takeuchi, Tsuneo, Arai, Kouichi, Furutake, N., Oda, Noriaki, Sekine, Makoto, Hayashi, Yoshihiro
Format:	Artikel
Sprache:	eng
Schlagworte:	45-nm node Applied sciences CAPACITANCE CONNECTORS (ELECTRICAL) Copper damascene Design. Technologies. Operation analysis. Testing Devices Dielectrics ELECTRICAL CONDUCTIVITY Electron scattering ELECTRONIC PRODUCTS Electronics ETCHING Exact sciences and technology Feasibility studies Integrated circuits interconnects Microelectronic fabrication (materials and surfaces technology) Plasmas Polymerization porous dielectric (porous low k ) Reliability Resists SCATTERING Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds SILICON DIOXIDE
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