High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization o...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2007-09, Vol.13 (5), p.1267-1272
Hauptverfasser: Ray, S.K., Tin Lun Choi, Groom, K.M., Stevens, B.J., Huiyun Liu, Hopkinson, M., Hogg, R.A.
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container_end_page 1272
container_issue 5
container_start_page 1267
container_title IEEE journal of selected topics in quantum electronics
container_volume 13
creator Ray, S.K.
Tin Lun Choi
Groom, K.M.
Stevens, B.J.
Huiyun Liu
Hopkinson, M.
Hogg, R.A.
description Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.
doi_str_mv 10.1109/JSTQE.2007.902997
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source IEEE Electronic Library (IEL)
subjects Broadband
Gallium arsenide
Indium
Narrowband
Optical attenuators
Optical Coherence Tomography
Optical interferometry
Optical scattering
Positioning
Power generation
quantum dot (QD)
Quantum dots
Quantum electronics
Semiconductor lasers
Spectra
Superluminescent diodes
superluminescent diodes (SLDs)
Temperature
Tomography
title High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography
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