High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography
Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization o...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2007-09, Vol.13 (5), p.1267-1272 |
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container_title | IEEE journal of selected topics in quantum electronics |
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creator | Ray, S.K. Tin Lun Choi Groom, K.M. Stevens, B.J. Huiyun Liu Hopkinson, M. Hogg, R.A. |
description | Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm. |
doi_str_mv | 10.1109/JSTQE.2007.902997 |
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This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. 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This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.</description><subject>Broadband</subject><subject>Gallium arsenide</subject><subject>Indium</subject><subject>Narrowband</subject><subject>Optical attenuators</subject><subject>Optical Coherence Tomography</subject><subject>Optical interferometry</subject><subject>Optical scattering</subject><subject>Positioning</subject><subject>Power generation</subject><subject>quantum dot (QD)</subject><subject>Quantum dots</subject><subject>Quantum electronics</subject><subject>Semiconductor lasers</subject><subject>Spectra</subject><subject>Superluminescent diodes</subject><subject>superluminescent diodes (SLDs)</subject><subject>Temperature</subject><subject>Tomography</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkk1v1DAQhiMEEqXwAxAXiwNwyTLjOI59hG1LQZVK1UXiZnntSTdVEqd2ItR_j7eLOHCoOM2r8TMfHr1F8RphhQj647frzdXpigM0Kw1c6-ZJcYR1rUpRC_40a2iakkv4-bx4kdItACih4Ki4O-9uduX38Isis6Nnn2OwfrtXV4sd52VgJ2Fm18tEsV-GbqTkaJzZSRc8JbbOmiJ5ZmeGvAY2DqwNkV1Oc-dsz9Zhl59HR2wThnAT7bS7f1k8a22f6NWfeFz8ODvdrM_Li8svX9efLkonVDOXbQUCwCpP1HiJW4--VcKhBpUT3nmSznHrpHC62ubftRY4RyXrdotIqjou3h_6TjHcLZRmM3R5-b63I4UlGQ2VxKZSPJPvHiUrIRCkrjP44VEQK1nno4MU_4fmxrBf9O0_6G1Y4phvYzRyrJVoZIbwALkYUorUmil2g433BsHsHWAeHGD2DjAHB-SaN4eajoj-8qISeTRUvwGQFaum</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Ray, S.K.</creator><creator>Tin Lun Choi</creator><creator>Groom, K.M.</creator><creator>Stevens, B.J.</creator><creator>Huiyun Liu</creator><creator>Hopkinson, M.</creator><creator>Hogg, R.A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2007.902997</doi><tpages>6</tpages></addata></record> |
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subjects | Broadband Gallium arsenide Indium Narrowband Optical attenuators Optical Coherence Tomography Optical interferometry Optical scattering Positioning Power generation quantum dot (QD) Quantum dots Quantum electronics Semiconductor lasers Spectra Superluminescent diodes superluminescent diodes (SLDs) Temperature Tomography |
title | High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography |
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