Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

In this work the incorporation of oxygen in Al0.2Ga0.3In0.5P:Be layers lattice-matched to GaAs grown by solid source molecular beam epitaxy (SSMBE) was studied by secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectroscopy. By increasing the temperature of the phosphorous cracking...

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Veröffentlicht in:	Journal of crystal growth 2009-03, Vol.311 (7), p.1650-1654
Hauptverfasser:	SOUBERVIELLE-MONTALVO, C, MISHOURNYI, V, DE ANDA, F, GORBATCHEV, A, HERNANDEZ, I. C, GALLARDO, S, KUDRIATSEV, Y, LOPEZ-LOPEZ, M, MENDEZ-GARCIA, V. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics
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