Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure
A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diff...
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| Veröffentlicht in: | Applied surface science 2009-04, Vol.255 (12), p.6355-6358 |
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| creator | SUI, Y. R XU, Y YAO, B XIAO, L LIU, B |
| description | A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr3N4 was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr3N4 compound is a p-type semiconductor with resistivity of 2.121 X 104 Omega cm, carrier concentration of 9 X 1014 cm-3 and Hall mobility of 0.34 cm2/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr3N4 compound was suggested in the present work. |
| doi_str_mv | 10.1016/j.apsusc.2009.02.015 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34308133</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34308133</sourcerecordid><originalsourceid>FETCH-LOGICAL-c242t-69f4a828f31889c60f82625fb38fcc6f5afdefee3341c467d1a31d7f55ac52273</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEqXwBhx8gRMJttdO3COq-JOq0kO59GIZx1ZcpUmwHSF4elJacdrV7sxo9CF0TUlOCS3ut7nu4xBNzgiZ5YTlhIoTNKGyhEwIyU_RZJTNMg7AztFFjFtCKBu_E7RZBdvroJPv2jts6nE1yQb_83fBuq1wH7rehuRtxJ3Dyyx4U-NNyJY41b7Fzjc7_OVTjdc1rDiOKQwmDcFeojOnm2ivjnOK3p8e1_OXbPH2_Dp_WGSGcZayYua4lkw6oFLOTEGcZAUT7gOkM6ZwQrvKOmsBODW8KCuqgValE0IbwVgJU3R7yB2Lfg42JrXz0dim0a3thqiAA5EUYBTyg9CELsZgneqD3-nwrShRe5Bqqw4g1R6kIkyNIEfbzTFfR6MbF3RrfPz3MgolLzmBXwG8diw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34308133</pqid></control><display><type>article</type><title>Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure</title><source>Access via ScienceDirect (Elsevier)</source><creator>SUI, Y. R ; XU, Y ; YAO, B ; XIAO, L ; LIU, B</creator><creatorcontrib>SUI, Y. R ; XU, Y ; YAO, B ; XIAO, L ; LIU, B</creatorcontrib><description>A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr3N4 was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr3N4 compound is a p-type semiconductor with resistivity of 2.121 X 104 Omega cm, carrier concentration of 9 X 1014 cm-3 and Hall mobility of 0.34 cm2/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr3N4 compound was suggested in the present work.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2009.02.015</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Electrical properties of specific thin films ; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied surface science, 2009-04, Vol.255 (12), p.6355-6358</ispartof><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c242t-69f4a828f31889c60f82625fb38fcc6f5afdefee3341c467d1a31d7f55ac52273</citedby><cites>FETCH-LOGICAL-c242t-69f4a828f31889c60f82625fb38fcc6f5afdefee3341c467d1a31d7f55ac52273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21374740$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SUI, Y. R</creatorcontrib><creatorcontrib>XU, Y</creatorcontrib><creatorcontrib>YAO, B</creatorcontrib><creatorcontrib>XIAO, L</creatorcontrib><creatorcontrib>LIU, B</creatorcontrib><title>Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure</title><title>Applied surface science</title><description>A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr3N4 was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr3N4 compound is a p-type semiconductor with resistivity of 2.121 X 104 Omega cm, carrier concentration of 9 X 1014 cm-3 and Hall mobility of 0.34 cm2/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr3N4 compound was suggested in the present work.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Electrical properties of specific thin films</subject><subject>Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots)</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EEqXwBhx8gRMJttdO3COq-JOq0kO59GIZx1ZcpUmwHSF4elJacdrV7sxo9CF0TUlOCS3ut7nu4xBNzgiZ5YTlhIoTNKGyhEwIyU_RZJTNMg7AztFFjFtCKBu_E7RZBdvroJPv2jts6nE1yQb_83fBuq1wH7rehuRtxJ3Dyyx4U-NNyJY41b7Fzjc7_OVTjdc1rDiOKQwmDcFeojOnm2ivjnOK3p8e1_OXbPH2_Dp_WGSGcZayYua4lkw6oFLOTEGcZAUT7gOkM6ZwQrvKOmsBODW8KCuqgValE0IbwVgJU3R7yB2Lfg42JrXz0dim0a3thqiAA5EUYBTyg9CELsZgneqD3-nwrShRe5Bqqw4g1R6kIkyNIEfbzTFfR6MbF3RrfPz3MgolLzmBXwG8diw</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>SUI, Y. R</creator><creator>XU, Y</creator><creator>YAO, B</creator><creator>XIAO, L</creator><creator>LIU, B</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090401</creationdate><title>Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure</title><author>SUI, Y. R ; XU, Y ; YAO, B ; XIAO, L ; LIU, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c242t-69f4a828f31889c60f82625fb38fcc6f5afdefee3341c467d1a31d7f55ac52273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Electrical properties of specific thin films</topic><topic>Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots)</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUI, Y. R</creatorcontrib><creatorcontrib>XU, Y</creatorcontrib><creatorcontrib>YAO, B</creatorcontrib><creatorcontrib>XIAO, L</creatorcontrib><creatorcontrib>LIU, B</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SUI, Y. R</au><au>XU, Y</au><au>YAO, B</au><au>XIAO, L</au><au>LIU, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure</atitle><jtitle>Applied surface science</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>255</volume><issue>12</issue><spage>6355</spage><epage>6358</epage><pages>6355-6358</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr3N4 was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr3N4 compound is a p-type semiconductor with resistivity of 2.121 X 104 Omega cm, carrier concentration of 9 X 1014 cm-3 and Hall mobility of 0.34 cm2/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr3N4 compound was suggested in the present work.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.apsusc.2009.02.015</doi><tpages>4</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T03%3A36%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation,%20characterization%20and%20properties%20of%20N-rich%20Zr-N%20thin%20film%20with%20Th3P4%20structure&rft.jtitle=Applied%20surface%20science&rft.au=SUI,%20Y.%20R&rft.date=2009-04-01&rft.volume=255&rft.issue=12&rft.spage=6355&rft.epage=6358&rft.pages=6355-6358&rft.issn=0169-4332&rft.eissn=1873-5584&rft_id=info:doi/10.1016/j.apsusc.2009.02.015&rft_dat=%3Cproquest_cross%3E34308133%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34308133&rft_id=info:pmid/&rfr_iscdi=true |