Interconnection between ground state and excited state gain in InAs/GaAs quantum dot semiconductor optical amplifiers

Different energy levels are generally assumed to be associated with ground state (GS) and excited state (ES) gain in semiconductor quantum dot lasers and amplifiers. We present calculations based on an 8 band k ·P Hamiltonian which show that this is not the case. Two distinct absorption bands are ca...

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Veröffentlicht in:	Physica Status Solidi (b) 2009-04, Vol.246 (4), p.868-871
Hauptverfasser:	Crowley, M. T., Andreev, A. D., Piwonski, T., Houlihan, J., O'Reilly, E. P., Huyet, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	73.21.La 78.45.+h 78.67.Hc Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser optical systems: design and operation Optics Physics Resonators, cavities, amplifiers, arrays, and rings
Online-Zugang:	Volltext
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