A low power low noise amplifier with subthreshold operation in 130 nm CMOS technology

In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and meas...

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Veröffentlicht in:	Microwave and optical technology letters 2008-11, Vol.50 (11), p.2762-2764
Hauptverfasser:	Song, Ickhyun, Jhon, Hee-Sauk, Jung, Hakchul, Koo, Minsuk, Shin, Hyungcheol
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS figure of merit low noise amplifier low power subthreshold
Online-Zugang:	Volltext
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