Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices
Epitaxial growth of fluoride quantum well structure of Ca x Sr 1− x F 2/CdF 2/Ca x Sr 1− x F 2 on Ge(1 1 1) is investigated. The two-step growth method was found to be useful for growth of the initial Ca x Sr 1− x F 2 layer on Ge(1 1 1) in which Ca x Sr 1− x F 2 was deposited at room temperature fol...
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| Veröffentlicht in: | Journal of crystal growth 2009-03, Vol.311 (7), p.2224-2226 |
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| container_title | Journal of crystal growth |
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| creator | Oshita, Takao Takahashi, Keita Tsutsui, Kazuo |
| description | Epitaxial growth of fluoride quantum well structure of Ca
x
Sr
1−
x
F
2/CdF
2/Ca
x
Sr
1−
x
F
2 on Ge(1
1
1) is investigated. The two-step growth method was found to be useful for growth of the initial Ca
x
Sr
1−
x
F
2 layer on Ge(1
1
1) in which Ca
x
Sr
1−
x
F
2 was deposited at room temperature followed by
in situ annealing for solid phase epitaxy. The quantum well structures composed of triple fluoride layers on Ge(1
1
1) substrates were superior to conventional ones grown on Si(1
1
1) substrate, due to the less chemical reactivity of CdF
2 with Ge than that with Si. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.10.080 |
| format | Article |
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x
Sr
1−
x
F
2/CdF
2/Ca
x
Sr
1−
x
F
2 on Ge(1
1
1) is investigated. The two-step growth method was found to be useful for growth of the initial Ca
x
Sr
1−
x
F
2 layer on Ge(1
1
1) in which Ca
x
Sr
1−
x
F
2 was deposited at room temperature followed by
in situ annealing for solid phase epitaxy. The quantum well structures composed of triple fluoride layers on Ge(1
1
1) substrates were superior to conventional ones grown on Si(1
1
1) substrate, due to the less chemical reactivity of CdF
2 with Ge than that with Si.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.10.080</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Molecular beam epitaxy ; B1. Alloys ; B1. Cadmium compounds ; B1. Calcium compounds ; B1. Fluorides ; B2. Semiconducting germanium ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Other topics in nanoscale materials and structures ; Physics ; Solid phase epitaxy; growth from solid phases ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2009-03, Vol.311 (7), p.2224-2226</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-b35c392481e36edfac0f04d5595cf39f1febe8b673f60d5d7eb3e483a805c3193</citedby><cites>FETCH-LOGICAL-c439t-b35c392481e36edfac0f04d5595cf39f1febe8b673f60d5d7eb3e483a805c3193</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.10.080$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25120,27904,27905,45975</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21432621$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Oshita, Takao</creatorcontrib><creatorcontrib>Takahashi, Keita</creatorcontrib><creatorcontrib>Tsutsui, Kazuo</creatorcontrib><title>Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices</title><title>Journal of crystal growth</title><description>Epitaxial growth of fluoride quantum well structure of Ca
x
Sr
1−
x
F
2/CdF
2/Ca
x
Sr
1−
x
F
2 on Ge(1
1
1) is investigated. The two-step growth method was found to be useful for growth of the initial Ca
x
Sr
1−
x
F
2 layer on Ge(1
1
1) in which Ca
x
Sr
1−
x
F
2 was deposited at room temperature followed by
in situ annealing for solid phase epitaxy. The quantum well structures composed of triple fluoride layers on Ge(1
1
1) substrates were superior to conventional ones grown on Si(1
1
1) substrate, due to the less chemical reactivity of CdF
2 with Ge than that with Si.</description><subject>A3. Molecular beam epitaxy</subject><subject>B1. Alloys</subject><subject>B1. Cadmium compounds</subject><subject>B1. Calcium compounds</subject><subject>B1. Fluorides</subject><subject>B2. Semiconducting germanium</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Solid phase epitaxy; growth from solid phases</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFUMFKAzEQDaJgrf6C5KLoYdfJZne7e1OKVqHQi55DNjuxKdtNm2SV_r0prV5lYAYe782beYRcM0gZsPJhla6U2_lPZ9MMoIpgChWckBGrJjwpALJTMoo9SyDLq3Ny4f0KICoZjMhi5ux3WFKr6dAFJ5OwND3V3WCdaZEuMaCzPrhBhcGhp7anM7xjNNY91dbR7SD7MKxpi19Gob8kZ1p2Hq-Oc0w-Xp7fp6_JfDF7mz7NE5XzOiQNLxSv4zkMeYmtlgo05G1R1IXSvNZMY4NVU064LqEt2gk2HPOKywqikNV8TG4PezfObgf0QayNV9h1skc7eMHzjNUlryKxPBBV_MM71GLjzFq6nWAg9vmJlfjNT-zz2-Mxvyi8OTpIr2SnneyV8X_qjOU8KzMWeY8HHsZ3vww64ZXBXmFrHKogWmv-s_oBcxeJyQ</recordid><startdate>20090315</startdate><enddate>20090315</enddate><creator>Oshita, Takao</creator><creator>Takahashi, Keita</creator><creator>Tsutsui, Kazuo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090315</creationdate><title>Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices</title><author>Oshita, Takao ; Takahashi, Keita ; Tsutsui, Kazuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-b35c392481e36edfac0f04d5595cf39f1febe8b673f60d5d7eb3e483a805c3193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A3. Molecular beam epitaxy</topic><topic>B1. Alloys</topic><topic>B1. Cadmium compounds</topic><topic>B1. Calcium compounds</topic><topic>B1. Fluorides</topic><topic>B2. Semiconducting germanium</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Solid phase epitaxy; growth from solid phases</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oshita, Takao</creatorcontrib><creatorcontrib>Takahashi, Keita</creatorcontrib><creatorcontrib>Tsutsui, Kazuo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oshita, Takao</au><au>Takahashi, Keita</au><au>Tsutsui, Kazuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-03-15</date><risdate>2009</risdate><volume>311</volume><issue>7</issue><spage>2224</spage><epage>2226</epage><pages>2224-2226</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Epitaxial growth of fluoride quantum well structure of Ca
x
Sr
1−
x
F
2/CdF
2/Ca
x
Sr
1−
x
F
2 on Ge(1
1
1) is investigated. The two-step growth method was found to be useful for growth of the initial Ca
x
Sr
1−
x
F
2 layer on Ge(1
1
1) in which Ca
x
Sr
1−
x
F
2 was deposited at room temperature followed by
in situ annealing for solid phase epitaxy. The quantum well structures composed of triple fluoride layers on Ge(1
1
1) substrates were superior to conventional ones grown on Si(1
1
1) substrate, due to the less chemical reactivity of CdF
2 with Ge than that with Si.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.10.080</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2009-03, Vol.311 (7), p.2224-2226 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34219638 |
| source | Elsevier ScienceDirect Journals |
| subjects | A3. Molecular beam epitaxy B1. Alloys B1. Cadmium compounds B1. Calcium compounds B1. Fluorides B2. Semiconducting germanium Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Solid phase epitaxy growth from solid phases Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices |
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