Growth behaviour of InGaN/GaN self-assembled quantum dots with different growth conditions in horizontal MOCVD

InGaN/GaN self‐assembled quantum dots (QDs) were grown on (0001) sapphire substrates by low pressure metalorganic chemical vapor deposition. The growth behavior of the InGaN/GaN QDs was examined under different experimental conditions. The InGaN/GaN QDs were formed in Stranski‐Krastanow growth mode...

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Veröffentlicht in:	Physica status solidi. C 2009-04, Vol.6 (4), p.797-801
Hauptverfasser:	Jung, Woo-Gwang, Jang, Jae-Min, Choi, Seung-Kyu, Kim, Jin-Yeol
Format:	Artikel
Sprache:	eng
Schlagworte:	78.55.Cr 78.67.Hc 81.05.Ea 81.07.Ta 81.15.Gh 81.16.Dn
Online-Zugang:	Volltext
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