Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-x...

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Veröffentlicht in:	Materials science forum 2009-01, Vol.610-613, p.598-603
Hauptverfasser:	Sun, Wei Guo, Cheng, Cai Jing, Qu, Bo, Zhao, Lan, Zhao, De Gang, Zhu, Jian Jun, Zhang, Xiang Feng, Lu, Zheng Xiong, Sun, Bao Juan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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