Growth and characterization of GdxHg1-xSe crystals

The growth of GdxHg1-xSe crystals by the vertical Bridgman method was studied in the composition range 0x0.1. The structural and electronic properties of GdxHg1-xSe crystals were investigated as a function of composition. It was found that an increase in gadolinium content up to x=0.01 results in a...

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Veröffentlicht in:	Journal of crystal growth 2008-08, Vol.310 (16), p.3752-3757
Hauptverfasser:	PARANCHYCH, S. Yu, ANDRIYCHUK, M. D, SOCHINSKII, N. V, REIG, C, MUNOZ, V
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Cross-disciplinary physics: materials science rheology Electronic transport in condensed matter Exact sciences and technology Growth from melts zone melting and refining Iii-v and ii-vi semiconductors Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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