Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga2Te3Sb5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapo...

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Veröffentlicht in:Advanced materials (Weinheim) 2009-05, Vol.21 (17), p.1695-1699
Hauptverfasser: Kao, Kin‐Fu, Lee, Chain‐Ming, Chen, Ming‐Jung, Tsai, Ming‐Jinn, Chin, Tsung‐Shune
Format: Artikel
Sprache:eng
Schlagworte:
current–voltage charateristics
data storage
GaTeSb
phase transitions
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Zusammenfassung:Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga2Te3Sb5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase‐change random‐access‐memory applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200800423