Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions

A study on the influence of the growth conditions on the optical and structural properties of In 0.6Ga 0.4As quantum dots (QDs) grown on GaAs(1 0 0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maxim...

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Veröffentlicht in:	Journal of crystal growth 2009-03, Vol.311 (7), p.1783-1786
Hauptverfasser:	Gushterov, A., Lingys, L., Reithmaier, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Nanostructures A1. Quantum dots A3. Molecular Beam Epitaxy B2. Semiconducting gallium arsenide B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Other topics in nanoscale materials and structures Photoluminescence Physics Quantum dots
Online-Zugang:	Volltext
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