Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions
A study on the influence of the growth conditions on the optical and structural properties of In 0.6Ga 0.4As quantum dots (QDs) grown on GaAs(1 0 0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maxim...
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| Veröffentlicht in: | Journal of crystal growth 2009-03, Vol.311 (7), p.1783-1786 |
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| container_title | Journal of crystal growth |
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| creator | Gushterov, A. Lingys, L. Reithmaier, J.P. |
| description | A study on the influence of the growth conditions on the optical and structural properties of In
0.6Ga
0.4As quantum dots (QDs) grown on GaAs(1
0
0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maximum (FWHM) of the photoluminescence (PL) spectra and on the density and height of quantum dots. Our results show that the dot density depends strongly on the growth parameters. From them the substrate temperature has the strongest influence on the density and the height of QDs as well as on the PL properties. By varying only this parameter a direct control of the dot density and the height is possible over more than one order of magnitude (from 6×10
10
cm
−2 at 480
°C to 1×10
8
cm
−2
at 530
°C). The smallest PL linewidth of 36
meV was observed by QDs deposited at low substrate temperatures (480
°C). |
| doi_str_mv | 10.1016/j.jcrysgro.2008.10.067 |
| format | Article |
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0.6Ga
0.4As quantum dots (QDs) grown on GaAs(1
0
0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maximum (FWHM) of the photoluminescence (PL) spectra and on the density and height of quantum dots. Our results show that the dot density depends strongly on the growth parameters. From them the substrate temperature has the strongest influence on the density and the height of QDs as well as on the PL properties. By varying only this parameter a direct control of the dot density and the height is possible over more than one order of magnitude (from 6×10
10
cm
−2 at 480
°C to 1×10
8
cm
−2
at 530
°C). The smallest PL linewidth of 36
meV was observed by QDs deposited at low substrate temperatures (480
°C).</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.10.067</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Nanostructures ; A1. Quantum dots ; A3. Molecular Beam Epitaxy ; B2. Semiconducting gallium arsenide ; B2. Semiconducting III–V materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Other topics in nanoscale materials and structures ; Photoluminescence ; Physics ; Quantum dots</subject><ispartof>Journal of crystal growth, 2009-03, Vol.311 (7), p.1783-1786</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-5ff10483961ac8babb4f5236786f0b74ae40e12a9c178d02d1b039c89a82bc153</citedby><cites>FETCH-LOGICAL-c439t-5ff10483961ac8babb4f5236786f0b74ae40e12a9c178d02d1b039c89a82bc153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.10.067$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21432514$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gushterov, A.</creatorcontrib><creatorcontrib>Lingys, L.</creatorcontrib><creatorcontrib>Reithmaier, J.P.</creatorcontrib><title>Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions</title><title>Journal of crystal growth</title><description>A study on the influence of the growth conditions on the optical and structural properties of In
0.6Ga
0.4As quantum dots (QDs) grown on GaAs(1
0
0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maximum (FWHM) of the photoluminescence (PL) spectra and on the density and height of quantum dots. Our results show that the dot density depends strongly on the growth parameters. From them the substrate temperature has the strongest influence on the density and the height of QDs as well as on the PL properties. By varying only this parameter a direct control of the dot density and the height is possible over more than one order of magnitude (from 6×10
10
cm
−2 at 480
°C to 1×10
8
cm
−2
at 530
°C). The smallest PL linewidth of 36
meV was observed by QDs deposited at low substrate temperatures (480
°C).</description><subject>A1. Nanostructures</subject><subject>A1. Quantum dots</subject><subject>A3. Molecular Beam Epitaxy</subject><subject>B2. Semiconducting gallium arsenide</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum dots</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPAyEUhYnRxFr9C4aN7qZeYB7MTtNoNTFxo2vCMExLMwMtMJr-e5lU3bo5kJvv3MdB6JrAggAp77aLrfKHsPZuQQF4Ki6grE7QjPCKZQUAPUWzpDQDmvNzdBHCFiA5CczQZuls9K7HrsOti3it3aCjP2BpW7zbuOj6cTBWB6Wt0rhP3y_Txs3Ev9iVfAh3k-D9KG0ch6lHwM0Bp22-EqWcbU00zoZLdNbJPuirn3eOPp4e35fP2evb6mX58JqpnNUxK7qOQM5ZXRKpeCObJu8KysqKlx00VS51DppQWStS8RZoSxpgteK15LRRpGBzdHvsu_NuP-oQxWDS8n0vrXZjECwnZVXXLIHlEVTeheB1J3beDNIfBAExBSu24jdYMQU71VOwyXjzM0EGJfvOS6tM-HNTkjNaJJmj-yOn07mfRnsRlJlSbI3XKorWmf9GfQOCAZO_</recordid><startdate>20090315</startdate><enddate>20090315</enddate><creator>Gushterov, A.</creator><creator>Lingys, L.</creator><creator>Reithmaier, J.P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090315</creationdate><title>Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions</title><author>Gushterov, A. ; Lingys, L. ; Reithmaier, J.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-5ff10483961ac8babb4f5236786f0b74ae40e12a9c178d02d1b039c89a82bc153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Nanostructures</topic><topic>A1. Quantum dots</topic><topic>A3. Molecular Beam Epitaxy</topic><topic>B2. Semiconducting gallium arsenide</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum dots</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gushterov, A.</creatorcontrib><creatorcontrib>Lingys, L.</creatorcontrib><creatorcontrib>Reithmaier, J.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gushterov, A.</au><au>Lingys, L.</au><au>Reithmaier, J.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-03-15</date><risdate>2009</risdate><volume>311</volume><issue>7</issue><spage>1783</spage><epage>1786</epage><pages>1783-1786</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>A study on the influence of the growth conditions on the optical and structural properties of In
0.6Ga
0.4As quantum dots (QDs) grown on GaAs(1
0
0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maximum (FWHM) of the photoluminescence (PL) spectra and on the density and height of quantum dots. Our results show that the dot density depends strongly on the growth parameters. From them the substrate temperature has the strongest influence on the density and the height of QDs as well as on the PL properties. By varying only this parameter a direct control of the dot density and the height is possible over more than one order of magnitude (from 6×10
10
cm
−2 at 480
°C to 1×10
8
cm
−2
at 530
°C). The smallest PL linewidth of 36
meV was observed by QDs deposited at low substrate temperatures (480
°C).</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.10.067</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of crystal growth, 2009-03, Vol.311 (7), p.1783-1786 |
| issn | 0022-0248 1873-5002 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Nanostructures A1. Quantum dots A3. Molecular Beam Epitaxy B2. Semiconducting gallium arsenide B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Other topics in nanoscale materials and structures Photoluminescence Physics Quantum dots |
| title | Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions |
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