Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures

Ballistic electron emission microscopy (BEEM) and its spectroscopy utilize ballistic transport of hot carriers as a versatile tool to characterize nanometer-scale structural and electronic properties of metallic and semiconducting materials and their interfaces. In this review, recent progress in ex...

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Veröffentlicht in:Surface science reports 2009-05, Vol.64 (5), p.169-190
Hauptverfasser: Yi, W., Stollenwerk, A.J., Narayanamurti, V.
Format: Artikel
Sprache:eng
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Zusammenfassung:Ballistic electron emission microscopy (BEEM) and its spectroscopy utilize ballistic transport of hot carriers as a versatile tool to characterize nanometer-scale structural and electronic properties of metallic and semiconducting materials and their interfaces. In this review, recent progress in experimental and theoretical aspects of the BEEM technique are covered. Emphasis is drawn to the development of BEEM in several emerging fields, including spin-sensitive hot-carrier transport through ferromagnetic thin films and multilayers, hot-electron spectroscopy and imaging of organic thin films and molecules, and hot-electron induced electroluminescence in semiconductor heterostructures. A brief discussion on BEEM of cross-sectional semiconductor heterostructures and advanced insulator films is also included.
ISSN:0167-5729
1879-274X
DOI:10.1016/j.surfrep.2009.01.001