Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy
The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer a...
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| Veröffentlicht in: | Journal of crystal growth 2009-03, Vol.311 (7), p.1662-1665 |
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| container_end_page | 1665 |
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| container_issue | 7 |
| container_start_page | 1662 |
| container_title | Journal of crystal growth |
| container_volume | 311 |
| creator | Beaudoin, M. Chan, I.C.W. Beaton, D. Elouneg-Jamroz, M. Tiedje, T. Whitwick, M. Young, E.C. Young, J.F. Zangenberg, N. |
| description | The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.11.068 |
| format | Article |
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The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values.</description><subject>A1. Characterization</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. Nitrides</subject><subject>B2. 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Characterization</topic><topic>A3. Molecular beam epitaxy</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III–V materials</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beaudoin, M.</creatorcontrib><creatorcontrib>Chan, I.C.W.</creatorcontrib><creatorcontrib>Beaton, D.</creatorcontrib><creatorcontrib>Elouneg-Jamroz, M.</creatorcontrib><creatorcontrib>Tiedje, T.</creatorcontrib><creatorcontrib>Whitwick, M.</creatorcontrib><creatorcontrib>Young, E.C.</creatorcontrib><creatorcontrib>Young, J.F.</creatorcontrib><creatorcontrib>Zangenberg, N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beaudoin, M.</au><au>Chan, I.C.W.</au><au>Beaton, D.</au><au>Elouneg-Jamroz, M.</au><au>Tiedje, T.</au><au>Whitwick, M.</au><au>Young, E.C.</au><au>Young, J.F.</au><au>Zangenberg, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-03-15</date><risdate>2009</risdate><volume>311</volume><issue>7</issue><spage>1662</spage><epage>1665</epage><pages>1662-1665</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.11.068</doi><tpages>4</tpages></addata></record> |
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| subjects | A1. Characterization A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics |
| title | Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy |
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