Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth
Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiam...
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| Veröffentlicht in: | Diamond and related materials 2008-07, Vol.17 (7-10), p.1143-1149 |
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| container_issue | 7-10 |
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| container_title | Diamond and related materials |
| container_volume | 17 |
| creator | ARNAULT, J. C SAADA, S NESLADEK, M WILLIAMS, O. A HAENEN, K BERGONZO, P OSAWA, E |
| description | Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C-C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate. |
| doi_str_mv | 10.1016/j.diamond.2008.01.008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34133863</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34133863</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-1df896acedacd0c7fdc9adb8bc10f4b88e3476db1e09f1062af1690ebb87bfe13</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKs_QchFb7vOZLfpxpu0aoWKgh9HQzYfdct2U5Mt2n9vpMXTwwzzzDAvIecIOQLyq2VuGrXynckZQJUD5gkHZIDVWGQAnB2SAQg2ygQvRsfkJMYlADJR4oB8THcq7VTno7Wm6RbUdzQ2baMTr-lLr-pU9Fu66YwNdMbo4_PkfUrtz9rHTbCRquRbFdotjb1apIZ3dBH8d_95So6caqM923NI3u5uXyezbP50_zC5mWeaMdFnaFwluNLWKG1Aj53RQpm6qjWCK-uqskU55qZGC8Jh-kg55AJsXVfj2lkshuRyt3cd_NfGxl6umqht26rO-k2URYlFUfEiDY52gzr4GIN1ch2alQpbiSD_0pRLuU9T_qUpAWVC8i72B1TUqnVBdbqJ_zIDzktgWPwCl2t5Sw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34133863</pqid></control><display><type>article</type><title>Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>ARNAULT, J. C ; SAADA, S ; NESLADEK, M ; WILLIAMS, O. A ; HAENEN, K ; BERGONZO, P ; OSAWA, E</creator><creatorcontrib>ARNAULT, J. C ; SAADA, S ; NESLADEK, M ; WILLIAMS, O. A ; HAENEN, K ; BERGONZO, P ; OSAWA, E</creatorcontrib><description>Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C-C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2008.01.008</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Methods of nanofabrication ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Specific materials ; Theory and models of film growth</subject><ispartof>Diamond and related materials, 2008-07, Vol.17 (7-10), p.1143-1149</ispartof><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-1df896acedacd0c7fdc9adb8bc10f4b88e3476db1e09f1062af1690ebb87bfe13</citedby><cites>FETCH-LOGICAL-c229t-1df896acedacd0c7fdc9adb8bc10f4b88e3476db1e09f1062af1690ebb87bfe13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23921,23922,25131,27915,27916</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20664021$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ARNAULT, J. C</creatorcontrib><creatorcontrib>SAADA, S</creatorcontrib><creatorcontrib>NESLADEK, M</creatorcontrib><creatorcontrib>WILLIAMS, O. A</creatorcontrib><creatorcontrib>HAENEN, K</creatorcontrib><creatorcontrib>BERGONZO, P</creatorcontrib><creatorcontrib>OSAWA, E</creatorcontrib><title>Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth</title><title>Diamond and related materials</title><description>Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C-C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Theory and models of film growth</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKs_QchFb7vOZLfpxpu0aoWKgh9HQzYfdct2U5Mt2n9vpMXTwwzzzDAvIecIOQLyq2VuGrXynckZQJUD5gkHZIDVWGQAnB2SAQg2ygQvRsfkJMYlADJR4oB8THcq7VTno7Wm6RbUdzQ2baMTr-lLr-pU9Fu66YwNdMbo4_PkfUrtz9rHTbCRquRbFdotjb1apIZ3dBH8d_95So6caqM923NI3u5uXyezbP50_zC5mWeaMdFnaFwluNLWKG1Aj53RQpm6qjWCK-uqskU55qZGC8Jh-kg55AJsXVfj2lkshuRyt3cd_NfGxl6umqht26rO-k2URYlFUfEiDY52gzr4GIN1ch2alQpbiSD_0pRLuU9T_qUpAWVC8i72B1TUqnVBdbqJ_zIDzktgWPwCl2t5Sw</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>ARNAULT, J. C</creator><creator>SAADA, S</creator><creator>NESLADEK, M</creator><creator>WILLIAMS, O. A</creator><creator>HAENEN, K</creator><creator>BERGONZO, P</creator><creator>OSAWA, E</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200807</creationdate><title>Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth</title><author>ARNAULT, J. C ; SAADA, S ; NESLADEK, M ; WILLIAMS, O. A ; HAENEN, K ; BERGONZO, P ; OSAWA, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-1df896acedacd0c7fdc9adb8bc10f4b88e3476db1e09f1062af1690ebb87bfe13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Methods of nanofabrication</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ARNAULT, J. C</creatorcontrib><creatorcontrib>SAADA, S</creatorcontrib><creatorcontrib>NESLADEK, M</creatorcontrib><creatorcontrib>WILLIAMS, O. A</creatorcontrib><creatorcontrib>HAENEN, K</creatorcontrib><creatorcontrib>BERGONZO, P</creatorcontrib><creatorcontrib>OSAWA, E</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ARNAULT, J. C</au><au>SAADA, S</au><au>NESLADEK, M</au><au>WILLIAMS, O. A</au><au>HAENEN, K</au><au>BERGONZO, P</au><au>OSAWA, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth</atitle><jtitle>Diamond and related materials</jtitle><date>2008-07</date><risdate>2008</risdate><volume>17</volume><issue>7-10</issue><spage>1143</spage><epage>1149</epage><pages>1143-1149</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C-C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.diamond.2008.01.008</doi><tpages>7</tpages></addata></record> |
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| ispartof | Diamond and related materials, 2008-07, Vol.17 (7-10), p.1143-1149 |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Specific materials Theory and models of film growth |
| title | Diamond nanoseeding on silicon : Stability under H2 MPCVD exposures and early stages of growth |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T06%3A46%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Diamond%20nanoseeding%20on%20silicon%20:%20Stability%20under%20H2%20MPCVD%20exposures%20and%20early%20stages%20of%20growth&rft.jtitle=Diamond%20and%20related%20materials&rft.au=ARNAULT,%20J.%20C&rft.date=2008-07&rft.volume=17&rft.issue=7-10&rft.spage=1143&rft.epage=1149&rft.pages=1143-1149&rft.issn=0925-9635&rft.eissn=1879-0062&rft_id=info:doi/10.1016/j.diamond.2008.01.008&rft_dat=%3Cproquest_cross%3E34133863%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34133863&rft_id=info:pmid/&rfr_iscdi=true |