Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films
Rapid thermal processing (RTP) under high sulfur partial pressure of copper rich Cu–In alloy thin films is investigated using in situ energy dispersive X-ray diffraction (EDXRD). Cu–In precursors are sulfurized at S vapor pressures in the 1 mbar range. Diffraction of white synchrotron light and reco...
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| Veröffentlicht in: | Journal of crystal growth 2008-07, Vol.310 (15), p.3638-3644 |
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| creator | Rodriguez-Alvarez, H. Kötschau, I.M. Schock, H.W. |
| description | Rapid thermal processing (RTP) under high sulfur partial pressure of copper rich Cu–In alloy thin films is investigated using in situ energy dispersive X-ray diffraction (EDXRD). Cu–In precursors are sulfurized at S vapor pressures in the 1
mbar range. Diffraction of white synchrotron light and recording of EDXRD spectra every 10
s at the EDDI beamline of the BESSY facility is used to monitor in situ the solid phases during the sulfurization and the subsequent cool-down. Ternary CuInS
2 forms via the binary InS and CuS and the ternary CuIn
5S
8 phases. The concentration of copper in the secondary Cu
2−
x
S phase, which segregates on the surface of the CuInS
2, shows a strong dependence on the maximum sulfur pressure during the RTP-like process. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.05.005 |
| format | Article |
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mbar range. Diffraction of white synchrotron light and recording of EDXRD spectra every 10
s at the EDDI beamline of the BESSY facility is used to monitor in situ the solid phases during the sulfurization and the subsequent cool-down. Ternary CuInS
2 forms via the binary InS and CuS and the ternary CuIn
5S
8 phases. The concentration of copper in the secondary Cu
2−
x
S phase, which segregates on the surface of the CuInS
2, shows a strong dependence on the maximum sulfur pressure during the RTP-like process.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.05.005</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Growth monitoring ; A1. Phase transitions ; A3. Thin film ; B1. Chalcopyrite ; B3. Solar cell ; Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Other nonelectronic physical properties ; Physical properties of thin films, nonelectronic ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of crystal growth, 2008-07, Vol.310 (15), p.3638-3644</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-3be30617f2416690d191d2eab51599e35e020a04ebc2a60923ccd27902f9bc803</citedby><cites>FETCH-LOGICAL-c373t-3be30617f2416690d191d2eab51599e35e020a04ebc2a60923ccd27902f9bc803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.05.005$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20537712$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rodriguez-Alvarez, H.</creatorcontrib><creatorcontrib>Kötschau, I.M.</creatorcontrib><creatorcontrib>Schock, H.W.</creatorcontrib><title>Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films</title><title>Journal of crystal growth</title><description>Rapid thermal processing (RTP) under high sulfur partial pressure of copper rich Cu–In alloy thin films is investigated using in situ energy dispersive X-ray diffraction (EDXRD). Cu–In precursors are sulfurized at S vapor pressures in the 1
mbar range. Diffraction of white synchrotron light and recording of EDXRD spectra every 10
s at the EDDI beamline of the BESSY facility is used to monitor in situ the solid phases during the sulfurization and the subsequent cool-down. Ternary CuInS
2 forms via the binary InS and CuS and the ternary CuIn
5S
8 phases. The concentration of copper in the secondary Cu
2−
x
S phase, which segregates on the surface of the CuInS
2, shows a strong dependence on the maximum sulfur pressure during the RTP-like process.</description><subject>A1. Growth monitoring</subject><subject>A1. Phase transitions</subject><subject>A3. Thin film</subject><subject>B1. Chalcopyrite</subject><subject>B3. Solar cell</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Other nonelectronic physical properties</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkE1OwzAQhS0EEuXnCsgb2CWM7SZpdqCKn0pIsIC15dqT4ipxiidBghV34IachLQFtmxmZvG9eTOPsRMBqQCRny_TpY1vtIhtKgEmKWQpQLbDRmJSqCQDkLtsNFSZgBxP9tkB0RJgUAoYMfcQkaiPmDhcYXAYOh7R1EnnG-Q-vCJ1fmE63wbibeDdM_JoVt6tp9iYmlNfV3307xuGtxWf9l8fn7M16gOvfN3QEdurTE14_NMP2dP11eP0Nrm7v5lNL-8SqwrVJWqOCnJRVHIs8rwEJ0rhJJp5JrKyRJUhSDAwxrmVJodSKmudLEqQVTm3E1CH7Gy7dxXbl364XDeeLNa1Cdj2pJUqMymFHMB8C9rYEkWs9Cr6xsQ3LUCvQ9VL_RuqXoeqIdNDqIPw9MfBkDV1FU2wnv7UckCKYmNwseVwePfVY9RkPQaLzke0nXat_8_qGxQIkvk</recordid><startdate>20080715</startdate><enddate>20080715</enddate><creator>Rodriguez-Alvarez, H.</creator><creator>Kötschau, I.M.</creator><creator>Schock, H.W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080715</creationdate><title>Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films</title><author>Rodriguez-Alvarez, H. ; Kötschau, I.M. ; Schock, H.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-3be30617f2416690d191d2eab51599e35e020a04ebc2a60923ccd27902f9bc803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Growth monitoring</topic><topic>A1. Phase transitions</topic><topic>A3. Thin film</topic><topic>B1. Chalcopyrite</topic><topic>B3. Solar cell</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Other nonelectronic physical properties</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodriguez-Alvarez, H.</creatorcontrib><creatorcontrib>Kötschau, I.M.</creatorcontrib><creatorcontrib>Schock, H.W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rodriguez-Alvarez, H.</au><au>Kötschau, I.M.</au><au>Schock, H.W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-07-15</date><risdate>2008</risdate><volume>310</volume><issue>15</issue><spage>3638</spage><epage>3644</epage><pages>3638-3644</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Rapid thermal processing (RTP) under high sulfur partial pressure of copper rich Cu–In alloy thin films is investigated using in situ energy dispersive X-ray diffraction (EDXRD). Cu–In precursors are sulfurized at S vapor pressures in the 1
mbar range. Diffraction of white synchrotron light and recording of EDXRD spectra every 10
s at the EDDI beamline of the BESSY facility is used to monitor in situ the solid phases during the sulfurization and the subsequent cool-down. Ternary CuInS
2 forms via the binary InS and CuS and the ternary CuIn
5S
8 phases. The concentration of copper in the secondary Cu
2−
x
S phase, which segregates on the surface of the CuInS
2, shows a strong dependence on the maximum sulfur pressure during the RTP-like process.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.05.005</doi><tpages>7</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Growth monitoring A1. Phase transitions A3. Thin film B1. Chalcopyrite B3. Solar cell Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Other nonelectronic physical properties Physical properties of thin films, nonelectronic Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films |
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