Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets
Commercial as-hp (hot pressing) treated Cr–Si targets are used throughout this study, with three different compositions: Cr20–Si80, Cr35–Si65 and Cr50–Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr–Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity i...
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Veröffentlicht in: | Ceramics international 2009-03, Vol.35 (2), p.565-570 |
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creator | Tam, Chung-Hung Lee, Shih-Chin Chang, Shih-Hsien Tang, Tzu-Piao Ho, Hsin-Hung Bor, Hui-Yun |
description | Commercial as-hp (hot pressing) treated Cr–Si targets are used throughout this study, with three different compositions: Cr20–Si80, Cr35–Si65 and Cr50–Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr–Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity inspections were performed. The experimental results showed that the 1373
K, 1750
MPa, 4
h HIP treated with three different Cr–Si targets had suppressed porosities successfully. The most efficient was Cr50–Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr–Si targets such as Cr20–Si80 and Cr35–Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr–Si targets. |
doi_str_mv | 10.1016/j.ceramint.2008.01.009 |
format | Article |
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K, 1750
MPa, 4
h HIP treated with three different Cr–Si targets had suppressed porosities successfully. The most efficient was Cr50–Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr–Si targets such as Cr20–Si80 and Cr35–Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr–Si targets.</description><identifier>ISSN: 0272-8842</identifier><identifier>EISSN: 1873-3956</identifier><identifier>DOI: 10.1016/j.ceramint.2008.01.009</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>A. Hot isostatic pressing ; A. Hot pressing ; B. Porosity ; Cr–Si targets</subject><ispartof>Ceramics international, 2009-03, Vol.35 (2), p.565-570</ispartof><rights>2008 Elsevier Ltd and Techna Group S.r.l.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c409t-3edc8a405bc0296fe245d0977ec567394657934a0bcd6587b488f58daaa382a53</citedby><cites>FETCH-LOGICAL-c409t-3edc8a405bc0296fe245d0977ec567394657934a0bcd6587b488f58daaa382a53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.ceramint.2008.01.009$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Tam, Chung-Hung</creatorcontrib><creatorcontrib>Lee, Shih-Chin</creatorcontrib><creatorcontrib>Chang, Shih-Hsien</creatorcontrib><creatorcontrib>Tang, Tzu-Piao</creatorcontrib><creatorcontrib>Ho, Hsin-Hung</creatorcontrib><creatorcontrib>Bor, Hui-Yun</creatorcontrib><title>Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets</title><title>Ceramics international</title><description>Commercial as-hp (hot pressing) treated Cr–Si targets are used throughout this study, with three different compositions: Cr20–Si80, Cr35–Si65 and Cr50–Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr–Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity inspections were performed. The experimental results showed that the 1373
K, 1750
MPa, 4
h HIP treated with three different Cr–Si targets had suppressed porosities successfully. The most efficient was Cr50–Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr–Si targets such as Cr20–Si80 and Cr35–Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr–Si targets.</description><subject>A. Hot isostatic pressing</subject><subject>A. Hot pressing</subject><subject>B. Porosity</subject><subject>Cr–Si targets</subject><issn>0272-8842</issn><issn>1873-3956</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkM1KxDAUhYMoOI6-gmTlrvU2aZtkpwz-wYCIug6Z9HYmw7SpSUZw5zv4hj6JHUbXri4cznfgfoScF5AXUNSX69xiMJ3rU84AZA5FDqAOyKSQgmdcVfUhmQATLJOyZMfkJMY1jKAqYUKebtoWbYrUtzStkCbshnEtbQPuopVP1EUfk0nO0iFgjK5f0hTQpA77RH1PZ-H78-vZ0WTCElM8JUet2UQ8-71T8np78zK7z-aPdw-z63lmS1Ap49hYaUqoFhaYqltkZdWAEgJtVQuuyroSipcGFrapKykWpZRtJRtjDJfMVHxKLva7Q_BvW4xJdy5a3GxMj34bNeeCgSpgLNb7og0-xoCtHoLrTPjQBeidQb3Wfwb1zqCGQo8GR_BqD-L4xrvDoKN12FtsXBid6ca7_yZ-ALuEftw</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Tam, Chung-Hung</creator><creator>Lee, Shih-Chin</creator><creator>Chang, Shih-Hsien</creator><creator>Tang, Tzu-Piao</creator><creator>Ho, Hsin-Hung</creator><creator>Bor, Hui-Yun</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090301</creationdate><title>Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets</title><author>Tam, Chung-Hung ; Lee, Shih-Chin ; Chang, Shih-Hsien ; Tang, Tzu-Piao ; Ho, Hsin-Hung ; Bor, Hui-Yun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c409t-3edc8a405bc0296fe245d0977ec567394657934a0bcd6587b488f58daaa382a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A. Hot isostatic pressing</topic><topic>A. Hot pressing</topic><topic>B. Porosity</topic><topic>Cr–Si targets</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tam, Chung-Hung</creatorcontrib><creatorcontrib>Lee, Shih-Chin</creatorcontrib><creatorcontrib>Chang, Shih-Hsien</creatorcontrib><creatorcontrib>Tang, Tzu-Piao</creatorcontrib><creatorcontrib>Ho, Hsin-Hung</creatorcontrib><creatorcontrib>Bor, Hui-Yun</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Ceramics international</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tam, Chung-Hung</au><au>Lee, Shih-Chin</au><au>Chang, Shih-Hsien</au><au>Tang, Tzu-Piao</au><au>Ho, Hsin-Hung</au><au>Bor, Hui-Yun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets</atitle><jtitle>Ceramics international</jtitle><date>2009-03-01</date><risdate>2009</risdate><volume>35</volume><issue>2</issue><spage>565</spage><epage>570</epage><pages>565-570</pages><issn>0272-8842</issn><eissn>1873-3956</eissn><abstract>Commercial as-hp (hot pressing) treated Cr–Si targets are used throughout this study, with three different compositions: Cr20–Si80, Cr35–Si65 and Cr50–Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr–Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity inspections were performed. The experimental results showed that the 1373
K, 1750
MPa, 4
h HIP treated with three different Cr–Si targets had suppressed porosities successfully. The most efficient was Cr50–Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr–Si targets such as Cr20–Si80 and Cr35–Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr–Si targets.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.ceramint.2008.01.009</doi><tpages>6</tpages></addata></record> |
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subjects | A. Hot isostatic pressing A. Hot pressing B. Porosity Cr–Si targets |
title | Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets |
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