Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

The growth kinetics and structural properties of nominally 15–45% SiGe virtual substrates (VS) on Si(1 0 0), Si(1 1 0) or Si(1 1 1) substrates have been investigated. Our “best” (1 0 0) growth procedure has been used, which leads to the formation of high-quality SiGe(1 0 0) VS with threading disloca...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2009-02, Vol.311 (4), p.1070-1079
Hauptverfasser:	Destefanis, V., Hartmann, J.M., Abbadie, A., Papon, A.M., Billon, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal morphology A1. Defects A1. Substrates A1. Surface structure A3. Chemical vapor deposition processes B1. Germanium silicon alloys Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Physics Stacking faults and other planar or extended defects Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!