Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe 2O 3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO 2) and silver (Ag) layer were deposited on the a-Si as buffe...

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Veröffentlicht in:	Journal of crystal growth 2009-02, Vol.311 (4), p.1025-1031
Hauptverfasser:	Lee, Choong Hee, Jeong, Tae Hoon, Kim, Do Kyung, Jeong, Woong Hee, Kang, Myung-Koo, Hwang, Tae Hyung, Kim, Hyun Jae
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Heat transfer A1. Industrial crystallization A1. Recrystallization A1. Solidification B1. Nanomaterials B1. Oxides B1. Semiconducting silicon Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion in solids Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Solid-solid transitions Solidification Specific phase transitions Transport properties of condensed matter (nonelectronic)
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