Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots

This paper introduces a simple and attractive calculation technique to evaluate the directionally solidified ingot characteristics type when considerable donor and acceptor impurities exist simultaneously in a silicon melt. The threshold limit of boron concentration in n-type ingot is C 0B=0.4375 C...

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Veröffentlicht in:	Journal of crystal growth 2009-01, Vol.311 (3), p.773-775
Hauptverfasser:	Dhamrin, M., Saitoh, T., Yamaga, I., Kamisako, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Solidification A3. Solar cells Applied sciences B1. Silicon Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Energy Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Natural energy Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Photovoltaic conversion Physics Solar cells. Photoelectrochemical cells Solar energy Solidification Solubility, segregation, and mixing phase separation
Online-Zugang:	Volltext
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