Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots
This paper introduces a simple and attractive calculation technique to evaluate the directionally solidified ingot characteristics type when considerable donor and acceptor impurities exist simultaneously in a silicon melt. The threshold limit of boron concentration in n-type ingot is C 0B=0.4375 C...
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| Veröffentlicht in: | Journal of crystal growth 2009-01, Vol.311 (3), p.773-775 |
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| container_end_page | 775 |
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| container_issue | 3 |
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| container_title | Journal of crystal growth |
| container_volume | 311 |
| creator | Dhamrin, M. Saitoh, T. Yamaga, I. Kamisako, K. |
| description | This paper introduces a simple and attractive calculation technique to evaluate the directionally solidified ingot characteristics type when considerable donor and acceptor impurities exist simultaneously in a silicon melt. The threshold limit of boron concentration in n-type ingot is
C
0B=0.4375
C
0P and when the boron concentration is above the threshold value, the bottom of the ingot. The bottom of the ingot exhibits boron domination due to its higher effective segregation coefficient. The fractions where polarity changes from n-type to p-type and vice versa are calculated for different boron/phosphorus concentration ratios. In addition, calculations of the required counter-doping concentration to make use of heavily boron- or phosphorus-doped recycled silicon feedstock are made and simple examples are given. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.09.094 |
| format | Article |
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C
0B=0.4375
C
0P and when the boron concentration is above the threshold value, the bottom of the ingot. The bottom of the ingot exhibits boron domination due to its higher effective segregation coefficient. The fractions where polarity changes from n-type to p-type and vice versa are calculated for different boron/phosphorus concentration ratios. In addition, calculations of the required counter-doping concentration to make use of heavily boron- or phosphorus-doped recycled silicon feedstock are made and simple examples are given.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.09.094</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Solidification ; A3. Solar cells ; Applied sciences ; B1. Silicon ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Energy ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Materials science ; Natural energy ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Photovoltaic conversion ; Physics ; Solar cells. Photoelectrochemical cells ; Solar energy ; Solidification ; Solubility, segregation, and mixing; phase separation</subject><ispartof>Journal of crystal growth, 2009-01, Vol.311 (3), p.773-775</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-606db4e8efc771bd76bedf3e030e92593818a7db2c1ae8b8b1ff919536ed113a3</citedby><cites>FETCH-LOGICAL-c373t-606db4e8efc771bd76bedf3e030e92593818a7db2c1ae8b8b1ff919536ed113a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.09.094$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21296000$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dhamrin, M.</creatorcontrib><creatorcontrib>Saitoh, T.</creatorcontrib><creatorcontrib>Yamaga, I.</creatorcontrib><creatorcontrib>Kamisako, K.</creatorcontrib><title>Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots</title><title>Journal of crystal growth</title><description>This paper introduces a simple and attractive calculation technique to evaluate the directionally solidified ingot characteristics type when considerable donor and acceptor impurities exist simultaneously in a silicon melt. The threshold limit of boron concentration in n-type ingot is
C
0B=0.4375
C
0P and when the boron concentration is above the threshold value, the bottom of the ingot. The bottom of the ingot exhibits boron domination due to its higher effective segregation coefficient. The fractions where polarity changes from n-type to p-type and vice versa are calculated for different boron/phosphorus concentration ratios. In addition, calculations of the required counter-doping concentration to make use of heavily boron- or phosphorus-doped recycled silicon feedstock are made and simple examples are given.</description><subject>A1. Solidification</subject><subject>A3. Solar cells</subject><subject>Applied sciences</subject><subject>B1. Silicon</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Energy</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Natural energy</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Solidification</subject><subject>Solubility, segregation, and mixing; phase separation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFUU2LFDEQDaLguPoXJBe99WzS6emPmzL4BQte9BzSSWWtIZ20SUaYX-LftdpZvS4UVYR671WlHmOvpdhLIfvb0_5k86Xc57RvhRj3YqLonrCdHAfVHIRon7Id5bYRbTc-Zy9KOQlBTCl27PcxLSvEYiqmyMF7sJUnz12KKXMTHTfWwlrpgct6zlgRCrepcWnFeM-JVH8Ah0C8jNYEvua0Qv4L23QwU4e0TQgXXlJAhx7B8eUcKm57V-pgBF4woCU5Uk21vGTPvAkFXj3UG_b944dvx8_N3ddPX47v7xqrBlWbXvRu7mAEb4dBzm7oZ3BegVACpvYwqVGOZnBza6WBcR5n6f0kp4PqwUmpjLphb6-6tPbPM5SqFywWQjAR0rlopfpO9FNHwP4KtDmVksHrNeNi8kVLoTcf9En_80FvPmgxUWzENw8TTKH7-GyixfKf3cp26skOwr274oC--wsh62IRooXrCbVL-NioP0i3p8E</recordid><startdate>20090115</startdate><enddate>20090115</enddate><creator>Dhamrin, M.</creator><creator>Saitoh, T.</creator><creator>Yamaga, I.</creator><creator>Kamisako, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090115</creationdate><title>Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots</title><author>Dhamrin, M. ; Saitoh, T. ; Yamaga, I. ; Kamisako, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-606db4e8efc771bd76bedf3e030e92593818a7db2c1ae8b8b1ff919536ed113a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Solidification</topic><topic>A3. Solar cells</topic><topic>Applied sciences</topic><topic>B1. Silicon</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Energy</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Natural energy</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Solidification</topic><topic>Solubility, segregation, and mixing; phase separation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dhamrin, M.</creatorcontrib><creatorcontrib>Saitoh, T.</creatorcontrib><creatorcontrib>Yamaga, I.</creatorcontrib><creatorcontrib>Kamisako, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dhamrin, M.</au><au>Saitoh, T.</au><au>Yamaga, I.</au><au>Kamisako, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-01-15</date><risdate>2009</risdate><volume>311</volume><issue>3</issue><spage>773</spage><epage>775</epage><pages>773-775</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>This paper introduces a simple and attractive calculation technique to evaluate the directionally solidified ingot characteristics type when considerable donor and acceptor impurities exist simultaneously in a silicon melt. The threshold limit of boron concentration in n-type ingot is
C
0B=0.4375
C
0P and when the boron concentration is above the threshold value, the bottom of the ingot. The bottom of the ingot exhibits boron domination due to its higher effective segregation coefficient. The fractions where polarity changes from n-type to p-type and vice versa are calculated for different boron/phosphorus concentration ratios. In addition, calculations of the required counter-doping concentration to make use of heavily boron- or phosphorus-doped recycled silicon feedstock are made and simple examples are given.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.09.094</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2009-01, Vol.311 (3), p.773-775 |
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| language | eng |
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| subjects | A1. Solidification A3. Solar cells Applied sciences B1. Silicon Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Energy Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Natural energy Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Photovoltaic conversion Physics Solar cells. Photoelectrochemical cells Solar energy Solidification Solubility, segregation, and mixing phase separation |
| title | Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots |
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