Overshoot Graded Layers for Mismatched Heteroepitaxial Devices

We have studied the use of overshoot graded layers for the control of the dislocation density in mismatched heteroepitaxial layers. Graded ZnS y Se 1– y structures were grown on GaAs (001) by photoassisted metalorganic vapor-phase epitaxy (MOVPE) and characterized by high-resolution x-ray diffractio...

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Veröffentlicht in:	Journal of electronic materials 2008-08, Vol.37 (8), p.1035-1043
Hauptverfasser:	Ocampo, J.F., Suarez, E., Jain, F.C., Ayers, J.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Diffraction Electronics and Microelectronics Exact sciences and technology Instrumentation Interaction between different crystal defects gettering effect Linear defects: dislocations, disclinations Materials Science Methods of deposition of films and coatings film growth and epitaxy MOVPE epitaxy Optical and Electronic Materials Physics Single-crystal and powder diffraction Solid State Physics Structure of solids and liquids crystallography Vapor phase epitaxy growth from vapor phase X-ray diffraction and scattering X-rays
Online-Zugang:	Volltext
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